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MX29F100TTC-90 参数 Datasheet PDF下载

MX29F100TTC-90图片预览
型号: MX29F100TTC-90
PDF下载: 下载PDF文件 查看货源
内容描述: 1M - BIT [ 128Kx8 / 64Kx16 ] CMOS FLASH MEMORY [1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 47 页 / 705 K
品牌: MCNIX [ MACRONIX INTERNATIONAL ]
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MX29F100T/B
COMMAND DEFINITIONS
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing
them in the improper sequence will reset the device to
the read mode. Table 1 defines the valid register com-
mand sequences. Note that the Erase Suspend (B0H)
and Erase Resume (30H) commands are valid only
while the Sector Erase operation is in progress. Either
of the two reset command sequences will reset the
device(when applicable).
P/N:PM0548
REV. 1.2, NOV. 12, 2001
7