MX29LV017B
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 2,097,152 x 8
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 70/90ns
• Fully compatible with MX29LV017A decice
• Low power consumption
- 30mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte Programming (9us typical)
- Sector Erase (Sector structure 64K-Byte x32)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
• Status Reply
- Data# Polling & Toggle bit for detection of program
and erase operation completion.
• Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion.
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors.
• CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Low VCC write inhibit is equal to or less than 1.4V
• Package type:
- 40-pin TSOP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
GENERAL DESCRIPTION
The MX29LV017B is a 16-mega bit Flash memory orga-
nized as 2M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV017B is
packaged in 40-pin TSOP. It is designed to be repro-
grammed and erased in system or in standard EPROM
programmers.
The standard MX29LV017B offers access time as fast
as 70ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV017B has separate chip enable (CE#) and
output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV017B uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV017B uses a 2.7V~3.6V VCC supply
to perform the High Reliability Erase and auto Program/
Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
P/N:PM1086
REV. 1.1, DEC. 07, 2004
1
MCNIX [ MACRONIX INTERNATIONAL ]
