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MX29LV400BXEC-70 参数 Datasheet PDF下载

MX29LV400BXEC-70图片预览
型号: MX29LV400BXEC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 4M- BIT [ 512K ×8 / 256K ×16 ]的CMOS单电压3V仅限于Flash存储器 [4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY]
分类和应用: 存储
文件页数/大小: 59 页 / 1217 K
品牌: MCNIX [ MACRONIX INTERNATIONAL ]
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MX29LV400T/B
COMMAND DEFINITIONS
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
read mode. Table 4 defines the valid register command
TABLE 5. MX29LV400T/B BUS OPERATION
ADDRESS
DESCRIPTION
CE
OE
WE RESET A17 A10 A9 A8
A11
Read
L
L
H
H
A7
AIN
A6 A5 A1
A2
Dout
A0
Q0~Q7
Q8~Q15
BYTE
=VIH
Dout
BYTE
=VIL
Q8~Q14=High Z
Q15=A-1
Write
L
H
L
H
AIN
DIN(3)
DIN
Q8~Q14=High Z
Q15=A-1
Reset
Temproary sector unlock
Output Disable
Standby
X
X
L
Vcc±
0.3V
Sector Protect
Chip Unprotect
Sector Protection Verify
L
L
L
H
H
L
L
L
H
X
X
H
X
X
X
H
X
L
VID
H
Vcc±
0.3V
VID
VID
H
SA
X
SA
X
X
X
X
X
X
L
H
L
X
X
X
H
H
H
L
L
L
DIN
DIN
CODE(5)
X
X
X
X
X
X
X
AIN
X
X
High Z
DIN
High Z
High Z
High Z
DIN
High Z
High Z
High Z
High Z
High Z
High Z
sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the
Sector Erase operation is in progress.
X VID X
NOTES:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 4.
2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.
3. Refer to Table 4 for valid Data-In during a write operation.
4. X can be VIL or VIH.
5. Code=00H/XX00H means unprotected.
Code=01H/XX01H means protected.
6. A17~A12=Sector address for sector protect.
7. The sector protect and chip unprotect functions may also be implemented via programming equipment.
P/N:PM0710
REV. 1.4, NOV. 23, 2001
8