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MX29LV640BTTC-90G 参数 Datasheet PDF下载

MX29LV640BTTC-90G图片预览
型号: MX29LV640BTTC-90G
PDF下载: 下载PDF文件 查看货源
内容描述: 64M - BIT [ 8M ​​×8 / 4M ×16 ]单电压3V仅限于Flash存储器 [64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY]
分类和应用: 存储
文件页数/大小: 69 页 / 502 K
品牌: MCNIX [ MACRONIX INTERNATIONAL ]
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MX29LV640BT/BB
FEATURES
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY
FLASH MEMORY
SOFTWARE FEATURES
• Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
• Status Reply
- Data# polling & Toggle bits provide detection of pro-
gram and erase operation completion
GENERAL FEATURES
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
• 8,388,608 x 8 / 4,194,304 x 16 switchable
• Sector structure
- 8KB (4KW) x 8 and 64KB(32KW) x 127
• Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent
program or erase operation in the protected sector
group
- Provides chip unprotect function to allow code
changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
• Secured Silicon Sector
- Provides a 128-word area for code or data that can
be permanently protected.
- Once this sector is protected, it is prohibited to pro-
gram or erase within the sector again.
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.5V
• Compatible with JEDEC standard
- Pin-out and software compatible to single power sup-
ply Flash
PERFORMANCE
• High Performance
- Fast access time: 90/120ns
- Fast program time: 11us/word, 45s/chip (typical)
- Fast erase time: 0.9s/sector, 45s/chip (typical)
• Low Power Consumption
- Low active read current: 9mA (typical) at 5MHz
- Low standby current: 0.2uA (typ.)
• Minimum 100,000 erase/program cycle
• 10 years data retention
HARDWARE FEATURES
• Ready/Busy (RY/BY#) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal
state machine to read mode
• WP#/ACC input
- Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
- ACC (high voltage) accelerates programming time
for higher throughput during system
PACKAGE
• 48-pin TSOP
• 63-Ball CSP
All Pb-free devices are RoHS Compliant
GENERAL DESCRIPTION
The MX29LV640BT/BB is a 64-mega bit Flash memory
organized as 8M bytes of 8 bits or 4M words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29LV640BT/BB is packaged in 48-pin TSOP and
63-ball CSP. It is designed to be reprogrammed and
erased in system or in standard EPROM programmers.
The standard MX29LV640BT/BB offers access time as
fast as 90ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LV640BT/BB has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
P/N:PM1076
REV. 1.2, SEP. 07, 2005
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