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MX66C1024SC-70 参数 Datasheet PDF下载

MX66C1024SC-70图片预览
型号: MX66C1024SC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 5V低功耗CMOS SRAM的128 ×8位 [5V Low Power CMOS SRAM 128 x 8 Bit]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 315 K
品牌: MCNIX [ MACRONIX INTERNATIONAL ]
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MX66C1024
n
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
t
ADDRESS
RC
t
t
D
OUT
OH
AA
t
OH
READ CYCLE2
CE1
(1,3,4)
t
CE2
(5)
ACS1
t
t
CLZ
ACS2
t
(5)
CHZ
D
OUT
READ CYCLE3
(1,4)
t
ADDRESS
RC
t
OE
AA
t
CE1
(5)
t
OE
OH
t
t
t
CLZ1
OLZ
ACS1
t
OHZ
(5)
(1,5)
t
CHZ
CE2
t
(5)
ACS2
t
(2,5)
CHZ
t
D
OUT
CLZ2
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE1 = V
IL
and CE2= V
IH.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = V
IL
.
5. Transition is measured
±
500mV from steady state with C
L
= 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
P/N DS00040
5
Rev. 1.0, November 1999
Macronix America Inc., USA 1338 Ridder Park Dr., San Jose, CA 95131
Tel (408)453-8088 Fax (408)451-0876 http: www.macronix.com