MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES P4SMA SERIES
Fig. 1 - Peak Pulse Power Rating Curve
100
100
Fig.2 - Pulse Derating Curve
Peak Pulse Power (P
PP
) or Current (I
PPM
)
Derating in Percentage,%
87.5
P
PPM
-Peak Pulse Power (kW)
Non-repetitive Pulse
Wavetorm shown in Fig.3
T
A
= 25°C
75
10
62.5
P4SMA100A –
P4SMA170A
1
P4SMA6.8A –
P4SMA91A
50
37.5
25
0.2x0.2"(5.0x5.0mm)
Copper Pad Areas
0.1
12.5
0.2x0.2"(5.0x5.0mm)
Copper Pad Areas
0
25
50
75
100
125
150
175
200
0
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
t
d
- Pulse Width (sec.)
T
A
- Ambient Temperature (°C)
Fig.3 - Pulse Waveform
150
10000
Fig.4 - Typical Junction Capacitance
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
Measured at
Stand-Off
Voltage, V
WM
I
PPM
- Peak Pulse Current,% I
RSM
t
r
= 10µsec.
Peak Value
I
PPM
100
Half Value- I
PPM
2
T
J
= 25°C
is defined as the point
where the peak current
decays to 50% of I
PPM
C
J
- Junction Capacitance(pF)
Pulse Width (t
d
)
1000
Uni-Directional
50
10/1000µsec.Waveform
as defined by R.E.A.
100
Bi-Directional
t
d
0
0
1.0
2.0
3.0
1000
4.0
4.0
10
1
10
100
200
t - Time(ms)
V
WM
- Reverse Stand-Off Voltage (V)
Fig.6 - Maximum Non-Repetitive Peak Forward Surge
Current Uni-Directional Only
200
1000
Fig. 5 - Typ.Transient Thermal Impedance
I
FSM
-Peak Forward Surge Current (A)
Transient Thermal Impedance
(
℃
/W)
T
J
= T
J
max,
8.3ms Single Half Sine-Wave
(JEDEC Method)
100
100
50
10
1
0
0.2
0.4
0.6
0.8
1
1.2
10
0
0.2
0.4
5
0.6
0.8
1
1.2
t
p
-Pulse Duration (sec)
Number of Cycles at 60 Hz
MDE [ MDE SEMICONDUCTOR, INC. ]
