MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES P6SMB SERIES
Fig.2 - Pulse Derating Curve
Fig. 1 - Peak Pulse Power Rating Curve
100
87.5
75
100
10
1
62.5
50
37.5
25
0.2x0.2"(5.0x5.0mm)
Copper Pad Areas
12.5
0
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
25
50
75
100
125
150
175
200
t - Pulse Width (sec.)
d
T
- Ambient Temperature
A
Fig.3 - Pulse Waveform
150
100
T
= 25°C
10000
6000
Fig.4 - Typical Junction Capacitance
J
t = 10µsec.
r
Pulse Width (t
)
d
Measured at
Zero Bias
Peak Value
IPPM
is defined as the point
where the peak current
decays to 50% of IPPM
Half Value- IPPM
1000
100
10
2
10/1000µsec.Waveform
as defined by R.E.A.
50
VR,Measured at
Stand-Off
Voltage, VWM
t
TJ = 25°C
d
1000
f = 1.0MHZ
0
4.0
Uni-Directional
4.0
3.0
3.0
Vsig = 50mVp-p
Bi-Directional
0
1.0
2.0
t - Time(ms)
1.0
100
200
10
VWM - Reverse Stand-Off Voltage (V)
Fig.6 - Maximum Non-Repetitive Peak
Forward Surge Current
Fig. 5 - Typ.Transient Thermal Impedance
100
200
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
100
10
1
1.0
0.1
10
0
0.2
0.4
0.6
0.8
1
1.2
0
0.2
0.4
0.6
0.8
1
1.2
Number of Cycles at 60 Hz
tp-Pulse Duration (sec)
MDE [ MDE SEMICONDUCTOR, INC. ]
