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SMCJ160A 参数 Datasheet PDF下载

SMCJ160A图片预览
型号: SMCJ160A
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装瞬态电压抑制器 [SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR]
分类和应用: 二极管光电二极管局域网
文件页数/大小: 3 页 / 82 K
品牌: MDE [ MDE SEMICONDUCTOR, INC. ]
 浏览型号SMCJ160A的Datasheet PDF文件第1页浏览型号SMCJ160A的Datasheet PDF文件第3页  
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES SMCJ SERIES
Fig. 1 - Peak Pulse Power Rating
100
Fig.2 - Pulse Derating Curve
Peak Pulse Power (P ) or Current (I
PP
)
PP
Derating in Percentage,%
100
87.5
75
62.5
50
37.5
25
12.5
0
0
0.2
0.4
0.6
0.8
1
1.2
P
PPM
-Peak Pulse Power (kW)
10
1
0.31x0.31"(8.0x8.0mm)
Copper Pad Areas
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
t
d
- Pulse Width (sec.)
100000
T
A
- Ambient Temperature (°C)
Fig.4 - Typical Junction Capacitance
Uni-Directional
Fig.3 - Pulse Waveform
150
20000
10000
Measured at
Zero Bias
I
PPM
- Peak Pulse Current,% I
RSM
t
r
= 10µsec.
Peak Value
I
PPM
100
Half Value- I
PPM
2
T
J
= 25°C
C
J
- Junction Capacitance(pF)
Pulse Width(td)is defined
as the point where the
peak current decays to
50% of I
PPM
1000
V
R
,Measured at
Stand-Off
Voltage, V
WM
100
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
100
50
10/1000µsec.Waveform
as defined by R.E.A.
Uni-Directional
Bi-Directional
1000
400
t
d
0
0
1.0
2.0
3.0
3.0
10
4.0
4.0
1.0
10
400
t - Time(ms)
V
WM
- Reverse Stand-Off Voltage (V)
1000
Fig. 5 - Typ.Transient Thermal Impedance
100
Transient Thermal Impedance
(
/W)
Fig.6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Use Only
200
10
1
1.0
Peak Forward Surge
Current,Amperes
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
T
J
= T
J
max,
0.1
0.001
0.01
0.1
1
10
100
1000
10
1
10
100
t
p
-Pulse Duration (sec)
Number of Cycles at 60 Hz