欢迎访问ic37.com |
会员登录 免费注册
发布采购

PSMG15001 参数 Datasheet PDF下载

PSMG15001图片预览
型号: PSMG15001
PDF下载: 下载PDF文件 查看货源
内容描述: 单个MOSFET模 [Single MOSFET Die]
分类和应用:
文件页数/大小: 4 页 / 144 K
品牌: MEDER [ MEDER ELECTRONIC ]
 浏览型号PSMG15001的Datasheet PDF文件第2页浏览型号PSMG15001的Datasheet PDF文件第3页浏览型号PSMG15001的Datasheet PDF文件第4页  
ECO-PAC
TM
2
Power MOSFET
in ECO-PAC 2
Single MOSFET Die
PSMG 150/01*
X18
I K10/11 A1
L N 8/9
V
DSS
I
D25
R
DS(on)
t
rr
=
100 V
= 165 A
= 8 mΩ
< 250 ns
Preliminary Data Sheet
MOSFET
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
Symbol
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C (MOSFET chip capability)
External lead (current limit)
T
C
= 25°C
1)
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
T
J
150°C, R
G
= 2
T
C
= 25°C
Test Conditions
K13
K15
*NTC optional
Maximum Ratings
100
100
±20
±30
165
76
720
180
60
3
5
400
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 3000V electrical isolation
• Low drain to tab capacitance(< 25pF)
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
• UL certified, E 148688
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
100
2.0
4.0
±100
100
2
8
60
90
9400
3200
1660
50
90
140
65
400
65
220
0.30
0.2
V
V
nA
µA
mA
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
= ±20 V, V
DS
= 0
V
DS
= V
DSS
; T
J
= 25°C
V
GS
= 0 V; T
J
= 125°C
V
GS
= 10 V, I
D
= 90 A
1)
V
DS
= 10 V; I
D
= 90 A
2)
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 90 A
R
G
= 1
(External)
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 90 A
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These Devices are sensitive
to electrostatic discharge. Users
should observe proper ESD handling
precautions.
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20