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EVB72006-915-FM-C 参数 Datasheet PDF下载

EVB72006-915-FM-C图片预览
型号: EVB72006-915-FM-C
PDF下载: 下载PDF文件 查看货源
内容描述: 315MHz的FSK / ASK发射评估板说明 [315MHz FSK/ASK Transmitter Evaluation Board Description]
分类和应用:
文件页数/大小: 12 页 / 510 K
品牌: MELEXIS [ Melexis Microelectronic Systems ]
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EVB72006  
315MHz FSK/ASK Transmitter  
Evaluation Board Description  
2.2 FSK Modulation  
FSK modulation can be achieved by pulling the  
VCC  
crystal oscillator frequency.  
A
CMOS-  
Fig. 2: Crystal pulling circuitry  
compatible data stream applied at the pin  
FSKDTA digitally modulates the XOSC via an  
integrated NMOS switch. Two external pulling  
capacitors CX1 and CX2 allow the FSK devia-  
tion Δf and the center frequency fc to be ad-  
justed independently. At FSKDTA = 0, CX2 is  
connected in parallel to CX1 leading to the low-  
frequency component of the FSK spectrum  
(fmin); while at FSKDTA = 1, CX2 is deactivated  
ROI  
XTAL  
CX1  
FSKSW  
CX2  
VEE  
and the XOSC is set to its high frequency fmax  
.
An external reference signal can be directly AC-  
coupled to the reference oscillator input pin  
ROI. Then the transmitter is used without a  
crystal. Now the reference signal sets the car-  
rier frequency and may also contain the FSK (or  
FM) modulation.  
FSKDTA  
Description  
0
1
fmin= fc - Δf (FSK switch is closed)  
fmax= fc + Δf (FSK switch is open)  
2.3 Crystal Pulling  
A crystal is tuned by the manufacturer to the  
required oscillation frequency f0 at a given load  
capacitance CL and within the specified calibra-  
tion tolerance. The only way to pull the oscilla-  
tion frequency is to vary the effective load ca-  
pacitance CLeff seen by the crystal.  
f
XTAL  
L1  
Figure 3 shows the oscillation frequency of a  
crystal as a function of the effective load ca-  
pacitance. This capacitance changes in accor-  
dance with the logic level of FSKDTA around  
the specified load capacitance. The figure illus-  
trates the relationship between the external  
pulling capacitors and the frequency deviation.  
It can also be seen that the pulling sensitivity  
increases with the reduction of CL. Therefore,  
applications with a high frequency deviation  
require a low load capacitance. For narrow  
band FSK applications, a higher load capaci-  
tance could be chosen in order to reduce the  
frequency drift caused by the tolerances of the  
chip and the external pulling capacitors.  
f
max  
C0  
CL  
C1  
R1  
eff  
f
c
f
min  
CL  
eff  
CX1 CRO CL  
CX1+CRO  
(CX1+CX2) CRO  
CX1+CX2+CRO  
Fig. 3: Crystal pulling characteristic  
For ASK applications CX2 can be omitted. Then CX1 has to be adjusted for center frequency.  
39012 72006 01  
Rev. 004  
Page 4 of 12  
EVB Description  
Dec/07