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MIC5016BWM 参数 Datasheet PDF下载

MIC5016BWM图片预览
型号: MIC5016BWM
PDF下载: 下载PDF文件 查看货源
内容描述: 低价双高或低侧MOSFET驱动器 [Low-Cost Dual High- or Low-Side MOSFET Driver]
分类和应用: 驱动器
文件页数/大小: 9 页 / 132 K
品牌: MICREL [ MICREL SEMICONDUCTOR ]
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MIC5016/5017
Micrel
Absolute Maximum Ratings
(Notes 1,2)
Supply Voltage ............................................... –20V to 60V
Input Voltage ..................................................... –20V to V
+
Source Voltage .................................................. –20V to V
+
Source Current .......................................................... 50mA
Gate Voltage .................................................. –20V to 50V
Junction Temperature .............................................. 150°C
Operating Ratings
(Notes 1,2)
θ
JA
(Plastic DIP) ..................................................... 140°C/W
θ
JA
(SOIC) ............................................................. 110°C/W
Ambient Temperature: B version ................ –40°C to +85°C
Ambient Temperature: A version ............. +55°C to +125°C
Storage Temperature ................................ –65°C to +150°C
Lead Temperature ...................................................... 260°C
(max soldering time: 10 seconds)
Supply Voltage (V
+
) ......................................... 2.75V to 30V
Electrical Characteristics
(Note 3) T
A
= –55°C to +125°C unless otherwise specified
Parameter
Supply Current
(Each Driver Channel)
V = 30V
V
+
= 5V
V
+
= 3V
Logic Input Voltage Threshold
V
IN
Logic Input Current
MIC5016 (non-inverting)
Logic Input Current
MIC5017 (inverting)
Input Capacitance
Gate Enhancement
V
GATE
- V
SUPPLY
Zener Clamp
V
GATE
- V
SOURCE
Gate Turn-on Time, t
ON
(Note 4)
3.0V
V
+
30V
T
A
= 25°C
3.0V
V
+
30V
3.0V
V
+
30V
3.0V
V
30V
+
+
Conditions
V
IN
De-Asserted (Note 5)
V
IN
Asserted (Note 5)
V
IN
De-Asserted
V
IN
Asserted
V
IN
De-Asserted
V
IN
Asserted
Digital Low Level
Digital High Level
V
IN
Low
V
IN
High
V
IN
Low
V
IN
High
V
IN
Asserted
V
IN
Asserted
V
IN
switched on, measure
time for V
GATE
to reach V
+
+ 4V
As above, measure time for
V
GATE
to reach V
+
+ 4V
V
IN
switched off, measure
time for V
GATE
to reach 1V
As above, measure time for
V
GATE
to reach 1V
Min
Typ
10
5.0
10
60
10
25
Max
25
10
25
100
25
35
0.8
Units
µA
mA
µA
µA
V
µA
µA
pF
V
V
ms
µs
µs
µs
V
2.0
–2.0
–2.0
0
1.0
–1.0
–1.0
5.0
2.0
2.0
17
4.0
13
15
2.5
90
6.0
6.0
35
37
8.0V
V
+
30V
V
+
= 4.5V
C
L
= 1000pF
V
+
= 12V
C
L
= 1000pF
V
+
= 4.5V
C
L
= 1000pF
V
+
= 12V
C
L
= 1000pF
17
8.0
140
30
30
41
Gate Turn-off Time, t
OFF
(Note 4)
Overvoltage Shutdown
Threshold
Note 1: Absolute Maximum Ratings
indicate limits beyond which damage to the device may occur. Electrical specifications do not apply
when operating the device beyond its specified
Operating Ratings.
Note 2:
The MIC5016/5017 is ESD sensitive.
Note 3:
Minimum and maximum
Electrical Characteristics
are 100% tested at T
A
= 25°C and T
A
= 85°C, and 100% guaranteed over the
entire operating temperature range. Typicals are characterized at 25°C and represent the most likely parametric norm.
Note 4:
Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see
Applications Information. Maximum value of switching time seen at 125°C, unit operated at room temperature will reflect the typical value
shown.
Note 5:
“Asserted” refers to a logic high on the MIC5016 and a logic low on the MIC5017.
5-148
October 1998