欢迎访问ic37.com |
会员登录 免费注册
发布采购

MIC5021BM 参数 Datasheet PDF下载

MIC5021BM图片预览
型号: MIC5021BM
PDF下载: 下载PDF文件 查看货源
内容描述: 高速高边MOSFET驱动器 [High-Speed High-Side MOSFET Driver]
分类和应用: 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
文件页数/大小: 9 页 / 135 K
品牌: MICREL [ MICREL SEMICONDUCTOR ]
 浏览型号MIC5021BM的Datasheet PDF文件第1页浏览型号MIC5021BM的Datasheet PDF文件第2页浏览型号MIC5021BM的Datasheet PDF文件第4页浏览型号MIC5021BM的Datasheet PDF文件第5页浏览型号MIC5021BM的Datasheet PDF文件第6页浏览型号MIC5021BM的Datasheet PDF文件第7页浏览型号MIC5021BM的Datasheet PDF文件第8页浏览型号MIC5021BM的Datasheet PDF文件第9页  
MIC5021
Micrel
Absolute Maximum Ratings
Supply Voltage (V
DD
) .................................................. +40V
Input Voltage ................................................ –0.5V to +15V
Sense Differential Voltage ..........................................
±6.5V
Sense + or Sense – to Gnd .......................... –0.5V to +36V
Timer Voltage (C
T
) ..................................................... +5.5V
V
BOOST
Capacitor .................................................... 0.01µF
Operating Ratings
Supply Voltage (V
DD
) .................................... +12V to +36V
Temperature Range
PDIP ....................................................... –40°C to +85°C
SOIC ...................................................... –40°C to +85°C
Electrical Characteristics
T
A
= 25°C, Gnd = 0V, V
DD
= 12V, C
T
= Open, Gate C
L
= 1500pF (IRF540 MOSFET) unless otherwise specified
Symbol
Parameter
D.C. Supply Current
Condition
V
DD
= 12V, Input = 0V
V
DD
= 36V, Input = 0V
V
DD
= 12V, Input = 5V
V
DD
= 36V, Input = 5V
Input Threshold
Input Hysteresis
Input Pull-Down Current
Current Limit Threshold
Gate On Voltage
Input = 5V
Note 1
V
DD
= 12V
Note 2
V
DD
= 36V
Note 2
t
G(ON)
t
G(OFF)
t
DLH
t
R
t
DLH
t
F
f
max
Note 1
Note 2
Note 3
Note 4
Note 5
Note 6
Note 7
Min
Typ
1.8
2.5
1.7
2.5
Max
4
6
4
6
2.0
Units
mA
mA
mA
mA
V
V
µA
mV
V
V
µs
µs
ns
ns
ns
ns
kHz
0.8
1.4
0.1
10
30
16
46
2
10
20
50
18
50
6
20
500
400
800
400
40
70
21
52
10
50
1000
500
1500
500
5
Gate On Time, Fixed
Gate Off Time, Adjustable
Gate Turn-On Delay
Gate Rise Time
Gate Turn-Off Delay
Gate Fall Time
Maximum Operating Frequency
Sense Differential > 70mV
Sense Differential > 70mV, C
T
= 0pF
Note 3
Note 4
Note 5
Note 6
Note 7
100
150
When using sense MOSFETs, it is recommended that R
SENSE
< 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio.
DC measurement.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 20V (Gate on voltage) to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 17V to 2V.
Frequency where gate on voltage reduces to 17V with 50% input duty cycle.
October 1998
5-171