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BC238 参数 Datasheet PDF下载

BC238图片预览
型号: BC238
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅平面外延型晶体管 [NPN SILICON PLANAR EPITAXIAL TRANSISTOR]
分类和应用: 晶体小信号双极晶体管放大器局域网
文件页数/大小: 6 页 / 72 K
品牌: MICRO-ELECTRONICS [ Micro Electronics ]
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BC107/BC108
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
200
500
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Test Cond ition s
for
BC107
V
CB
= 40 V
V
CB
= 40 V
for
BC108
V
CB
= 20 V
V
CB
= 20 V
I
C
= 10
µA
for
BC107
for
BC108
I
C
= 10 mA
for
BC107
for
BC108
I
E
= 10
µA
for
BC107
for
BC108
I
C
= 10 mA
I
C
= 100 mA
I
C
= 10 mA
I
C
= 100 mA
I
C
= 2 mA
I
C
= 10 mA
I
C
= 2 mA
for
BC107
for
BC107
for
BC107
for
BC108
for
BC108
for
BC108
for
BC108
I
C
= 10
µA
for
BC107
for
BC107
for
BC107
for
BC108
for
BC108
for
BC108
for
BC108
I
B
= 0.5 mA
I
B
= 5 mA
I
B
= 0.5 mA
I
B
= 5 mA
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
Gr. A
Gr. B
Gr. A
Gr. B
Gr. C
V
CE
= 5 V
Gr. A
Gr. B
Gr. A
Gr. B
Gr. C
110
110
200
110
110
200
420
120
90
150
120
90
150
270
250
190
300
370
190
300
500
2
450
220
450
800
220
450
800
550
Min.
Typ .
Max.
15
15
15
15
50
30
45
20
6
5
70
200
750
950
650
700
700
770
250
600
Un it
nA
µA
µA
µA
V
V
V
V
V
V
mV
mV
mV
mV
mV
mV
T
ca s e
= 150 C
o
o
T
ca s e
= 150 C
V
(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
V
( BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter O n
Voltage
DC Current G ain
V
CE(sat )
V
BE(s at)
V
BE(on)
h
FE
40
40
100
h
fe
Small Signal Current
Gain
I
C
= 2 mA
V
CE
= 5 V
f = 1KHz
for
BC107
for
BC107
Gr. A
for
BC107
Gr. B
for
BC108
for
BC108
Gr. A
for
BC108
Gr. B
for
BC108
Gr. C
I
C
= 10 mA V
CE
= 10 V f = 100 MHz
Pulsed: Pulse duration = 300
µs,
duty cycle
1 %
2/6