BU208D/508D/508DFI
HIGH VOLTAGE FASTSWITCHING NPN
POWER TRANSISTOR
s
s
s
s
s
SGS-THOMSON PREFERRED SALESTYPES
HIGH VOLTAGE CAPABILITY
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
JEDEC TO-3 METAL CASE
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
TO-3
1
2
APPLICATIONS:
s
HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208D, BU508D and BU508DFI are
manufactured
using
Multiepitaxial
Mesa
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
3
2
3
2
TO-218
1
ISOWATT218
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
CES
V
CEO
V
EBO
I
C
I
CM
P
tot
T
s tg
T
j
June 1996
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
TO - 3
T otal Dissipation at T
c
= 25
o
C
Storage Temperature
Max. O perating Junction Temperature
150
150
Valu e
1500
700
10
8
15
TO - 218
125
150
ISOW ATT218
50
-65 to 150
150
W
o
o
Unit
V
V
V
A
A
-65 to 150 -65 to 150
C
C
1/8
MICRO-ELECTRONICS [ Micro Electronics ]
