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93C46 参数 Datasheet PDF下载

93C46图片预览
型号: 93C46
PDF下载: 下载PDF文件 查看货源
内容描述: 1K 5.0V Microwire串行EEPROM [1K 5.0V Microwire Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 12 页 / 147 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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93C46B
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Maximum Ratings*
TABLE 1-1
Name
CS
CLK
DI
DO
V
SS
NC
V
CC
PIN FUNCTION TABLE
Function
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
No Connect
Power Supply
V
CC
...................................................................................7.0V
All inputs and outputs w.r.t. V
SS
...............-0.6V to V
CC
+1.0V
Storage temperature .....................................-65
°
C to +150
°
C
Ambient temp. with power applied.................-65
°
C to +125
°
C
Soldering temperature of leads (10 seconds) ............. +300
°
C
ESD protection on all pins................................................4 kV
*Notice:
Stresses above those listed under “Maximum ratings” may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for extended peri-
ods may affect device reliability.
TABLE 1-2
DC AND AC ELECTRICAL CHARACTERISTICS
Commercial (C)
Industrial (I)
Automotive (E)
Symbol
V
IH
V
IL
V
OL
V
OH
I
LI
I
LO
C
IN
, C
OUT
I
CC
read
Min.
2.0
-0.3
2.4
-10
-10
250
250
50
0
250
100
100
1M
V
CC
= +4.5V to +5.5V Tamb = 0
°
C to +70
°
C
V
CC
= +4.5V to +5.5V Tamb = -40
°
C to +85
°
C
V
CC
= +4.5V to +5.5V Tamb = -40
°
C to +125
°
C
Max.
V
CC
+1
0.8
0.4
10
10
7
1
1.5
1
2
400
100
500
2
6
15
Units
V
V
V
V
µ
A
µ
A
pF
mA
mA
µ
A
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ms
cycles
Relative to CLK
Relative to CLK
C
L
= 100 pF
C
L
= 100 pF (Note 2)
C
L
= 100 pF
ERASE/WRITE mode
ERAL mode
WRAL mode
25
°
C, V
CC
= 5.0V, Block Mode (Note 3)
Relative to CLK
Relative to CLK
CS = V
SS
V
CC
= 4.5V
I
OL
= 2.1 mA; V
CC
= 4.5V
I
OH
= -400
µ
A; V
CC
= 4.5V
V
IN
= V
SS
to V
CC
V
OUT
= V
SS
to V
CC
V
IN
/V
OUT
= 0 V (Notes 1 & 2)
Tamb = +25
°
C, F
CLK
= 1 MHz
Conditions
All parameters apply over the
specified operating ranges
unless otherwise noted
Parameter
High level input voltage
Low level input voltage
Low level output voltage
High level output voltage
Input leakage current
Output leakage current
Pin capacitance
(all inputs/outputs)
Operating current
Standby current
Clock frequency
Clock high time
Clock low time
Chip select setup time
Chip select hold time
Chip select low time
Data input setup time
Data input hold time
Data output delay time
Data output disable time
Status valid time
Program cycle time
Endurance
I
CC
write
I
CCS
F
CLK
T
CKH
T
CKL
T
CSS
T
CSH
T
CSL
T
DIS
T
DIH
T
PD
T
CZ
T
SV
T
WC
T
EC
T
WL
Note 1:
This parameter is tested at Tamb = 25
°
C and F
CLK
= 1 MHz.
2:
This parameter is periodically sampled and not 100% tested.
3:
This application is not tested but guaranteed by characterization. For endurance estimates in a specific appli-
cation, please consult the Total Endurance Model which may be obtained on Microchip’s BBS or website.
DS21172D-page 2
Preliminary
©
1997 Microchip Technology Inc.