M
FEATURES
93LC46/56/66
BLOCK DIAGRAM
V
CC
V
SS
1K/2K/4K 2.0V Microwire
®
Serial EEPROM
• Single supply with programming operation down
to 2.0V (Commercial only)
• Low power CMOS technology
- 1 mA active current typical
- 5
µ
A standby current (typical) at 3.0V
• ORG pin selectable memory configuration
- 128 x 8 or 64 x 16-bit organization (93LC46)
- 256 x 8 or 128 x 16-bit organization(93LC56)
- 512 x 8 or 256 x 16-bit organization(93LC66)
• Self-timed ERASE and WRITE cycles
(including auto-erase)
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device status signal during ERASE/WRITE cycles
• Sequential READ function
• 10,000,000 ERASE/WRITE cycles guaranteed on
93LC56 and 93LC66
• 1,000,000 E/W cycles guaranteed on 93LC46
• Data retention > 200 years
• 8-pin PDIP/SOIC and 14-pin SOIC package
(SOIC in JEDEC and EIAJ standards)
• Temperature ranges supported
- Commercial (C):
0
°
C to +70
°
C
- Industrial (I):
-40
°
C to +85
°
C
MEMORY
ARRAY
ADDRESS
DECODER
ADDRESS
COUNTER
DATA REGISTER
DI
MODE
DECODE
LOGIC
OUTPUT
BUFFER
DO
CS
CLK
CLOCK
GENERATOR
DESCRIPTION
The Microchip Technology Inc. 93LC46/56/66 are 1K,
2K, and 4K low-voltage serial Electrically Erasable
PROMs. The device memory is configured as x8 or x16
bits, depending on the ORG pin setup. Advanced
CMOS technology makes these devices ideal for
low-power, nonvolatile memory applications. The
93LC46/56/66 is available in standard 8-pin DIP and 8/
14-pin surface mount SOIC packages. The 93LC46X/
56X/66X are only offered in an “SN” package.
PACKAGE TYPES
SOIC
NC
1
2
14
13
NC
Vcc
NU
NC
ORG
V
SS
NC
DIP
CS
CLK
DI
DO
1
8
V
CC
NU
ORG
V
SS
1
SOIC
8
V
CC
NU
ORG
V
SS
1
SOIC
8
ORG
V
SS
DO
DI
CS
CLK
93LC56
93LC66
3
4
5
6
7
12
11
10
9
8
CS
CLK
DI
DO
NU
V
CC
CS
CLK
NC
DI
DO
NC
93LC46
93LC56
93LC66
93LC46
93LC56
93LC66
93LC46X
93LC56X
93LC66X
2
3
4
7
6
5
2
3
4
7
6
5
2
3
4
7
6
5
©
1997 Microchip Technology Inc.
DS11168L-page 1
MICROCHIP [ MICROCHIP TECHNOLOGY ]
