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JS28F256M29EWHB 参数 Datasheet PDF下载

JS28F256M29EWHB图片预览
型号: JS28F256M29EWHB
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 75 页 / 855 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Bus Operations
During PROGRAM or ERASE operations the device will continue to use the program/
erase supply current (I
CC3
) until the operation completes.
Output Disable
Data I/Os are High-Z when OE# is HIGH.
Reset
During reset mode the device is deselected and the outputs are High-Z. The device is in
reset mode when RST# is LOW. The power consumption is reduced to the standby level,
independently from CE#, OE#, or WE# inputs.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2012 Micron Technology, Inc. All rights reserved.