256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Common Flash Interface
Table 21: Primary Algorithm-Specific Extended Query Table (Continued)
Note 1 applies to the entire table
Address
x16
x8
Data
Description
Value
46h
8Ch
0002h
Erase suspend:
2
00 = Not supported
01 = Read only
02 = Read and write
47h
48h
8Eh
90h
0001h
0000h
Block protection:
00 = Not supported
x = Number of blocks per group
1
Temporary block unprotect:
00 = Not supported
01 = Supported
Not supported
49h
4Ah
4Bh
92h
94h
96h
0008h
0000h
0000h
Block protect/unprotect:
08 = M29EWH/M29EWL
8
Simultaneous operations:
Not supported
–
Burst mode:
Not supported
00 = Not supported
01 = Supported
4Ch
98h
0003h
Page mode:
16-word page
00 = Not supported
01 = 8-word page
02 = 8-word page
03 = 16-word page
4Dh
4Eh
4Fh
9Ah
9Ch
9Eh
00B5h
00C5h
00xxh
VPPH supply minimum program/erase voltage:
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
11.5V
12.5V
VPPH supply maximum program/erase voltage:
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
Top/bottom boot block flag:
xx = 04h: Uniform device, HW protection for lowest block
xx = 05h: Uniform device, HW protection for highest block
Uniform +
VPP/WP# protect-
ing highest or
lowest block
50h
A0h
0001h
Program suspend:
00 = Not supported
01 = Supported
Supported
1. The values in this table are valid for both packages.
Note:
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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