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JS28F256M29EWLA 参数 Datasheet PDF下载

JS28F256M29EWLA图片预览
型号: JS28F256M29EWLA
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 75 页 / 855 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx
JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx
JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx
PC28F00BM29EWxx, RC28F00BM29EWxx
Features
• 2Gb = stacked device (two 1Gb die)
• Supply voltage
– V
CC
= 2.7–3.6V (program, erase, read)
– V
CCQ
= 1.65–3.6V (I/O buffers)
• Asynchronous random/page read
– Page size: 16 words or 32 bytes
– Page access: 25ns
– Random access: 100ns (Fortified BGA);
110ns (TSOP)
• Buffer program: 512-word program buffer
• Program time
– 0.88µs per byte (1.14 MB/s) TYP when using full
512-word buffer size in buffer program
• Memory organization
– Uniform blocks: 128-Kbytes or 64-Kwords each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume capability
– Read from any block during a PROGRAM SUS-
PEND operation
– Read or program another block during an ERASE
SUSPEND operation
• BLANK CHECK operation to verify an erased block
• Unlock bypass, block erase, chip erase, and write to
buffer capability
– Fast buffered/batch programming
– Fast block/chip erase
• V
PP
/WP# pin protection
– Protects first or last block regardless of block
protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
– Password access
• Extended memory block
– 128-word (256-byte) block for permanent, secure
identification
– Programmed or locked at the factory or by the
customer
• Low power consumption: Standby mode
• JESD47H-compliant
– 100,000 minimum ERASE cycles per block
– Data retention: 20 years (TYP)
• 65nm multilevel cell (MLC) process technology
• Fortified BGA and TSOP packages
• Green packages available
– RoHS-compliant
– Halogen-free
• Operating temperature
– Ambient: –40°C to +85°C
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.