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JS28F256M29EWLA 参数 Datasheet PDF下载

JS28F256M29EWLA图片预览
型号: JS28F256M29EWLA
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储
文件页数/大小: 75 页 / 855 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash  
Protection Operations  
A block can be protected from program or erase by issuing a PROGRAM NONVOLATILE  
PROTECTION BIT (A0h) command, along with the block address. This command sets  
the nonvolatile protection bit to 0 for a given block.  
The status of a nonvolatile protection bit for a given block or group of blocks can be  
read by issuing a READ NONVOLATILE MODIFY PROTECTION BIT command, along  
with the block address.  
The nonvolatile protection bits are erased simultaneously by issuing a CLEAR ALL  
NONVOLATILE PROTECTION BITS (80/30h) command. No specific block address is re-  
quired. If the nonvolatile protection bit lock bit is set to 0, the command fails.  
PDF: 09005aef849b4b09  
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2012 Micron Technology, Inc. All rights reserved.