256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Common Flash Interface
Table 19: CFI Query System Interface Information
Note 1 applies to the entire table
Address
x16
1Bh
x8
36h
Data
0027h
Description
V
CC
logic supply minimum program/erase voltage
Bits[7:4] BCD value in volts
Bits[3:0] BCD value in 100mV
V
CC
logic supply maximum program/erase voltage
Bits[7:4] BCD value in volts
Bits[3:0] BCD value in 100mV
V
PPH
(programming) supply minimum program/erase voltage
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
V
PPH
(programming) supply maximum program/erase voltage
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 10mV
Typical timeout for single byte/word program = 2
n
μs
Typical timeout for maximum size buffer program = 2
n
μs
Typical timeout per individual block erase = 2
n
ms
Typical timeout for full chip erase = 2
n
ms
Value
2.7V
1Ch
38h
0036h
3.6V
1Dh
3Ah
00B5h
11.5V
1Eh
3Ch
00C5h
12.5V
1Fh
20h
21h
22h
3Eh
40h
42h
44h
0009h
000Ah
000Ah
0012h
0013h
0014h
0015h
512µs
1024µs
1s
256Mb: 262s
512Mb: 524s
1Gb: 1048s
2Gb: 2097s
23h
24h
25h
26h
46h
48h
4Ah
4Ch
0001h
0002h
0002h
0002h
0002h
0002h
0002h
Note:
Maximum timeout for byte/word program = 2
n
times typical
Maximum timeout for buffer program = 2
n
times typical
Maximum timeout per individual block erase = 2
n
times typical
Maximum timeout for chip erase = 2
n
times typical
1024µs
4096µs
4s
256Mb: 1048s
512Mb: 2096s
1Gb: 4194s
2Gb: 8388s
1. The values in this table are valid for both packages.
Table 20: Device Geometry Definition
Address
x16
27h
x8
4Eh
Data
0019h
001Ah
001Bh
001Ch
28h
29h
50h
52h
0002h
0000h
Flash device interface code description
Description
Device size = 2
n
in number of bytes
Value
32MB
64MB
128MB
256MB
x8, x16
asynchronous
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
50
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2012 Micron Technology, Inc. All rights reserved.
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