512Mb, 1Gb, 2Gb: P30-65nm
Maximum Ratings and Operating Conditions
Maximum Ratings and Operating Conditions
Stresses greater than those listed can cause permanent damage to the device. This is
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated is not guaranteed.
Table 33: Maximum Ratings
Parameter
Temperature under bias
Storage temperature
Voltage on any signal (except V
CC
, V
PP
, and V
CCQ
)
V
PP
voltage
V
CC
voltage
V
CCQ
voltage
Output short circuit current
Notes:
Maximum Rating
–40°C to + 85 °C
–65°C to + 125 °C
–2V to +5.6V
–2V to +11.5V
–2V to +4V
–2V to +5.6V
100mA
1
1, 2
1
1
3
Notes
1. Voltages shown are specified with respect to V
SS
. During infrequent nonperiodic transi-
tions, the level may undershoot to –2V for periods less than 20ns or overshoot to V
CC
+
2V or V
CCQ
+ 2V or V
PP
+ 2V for periods less than 20ns.
2. Program/erase voltage is typically 1.7–2.0V. 9.0V can be applied for 80 hours maximum
total, to any blocks for 1000 cycles maximum. 9.0V program/erase voltage may reduce
block cycling capability.
3. Output is shorted for no more than one second, and more than one output is not shor-
ted at one time.
Table 34: Operating Conditions
Symbol
T
A
V
CC
V
CCQ
V
PPL
V
PPH
t
PPH
Parameter
Operating temperature
V
CC
supply voltage
I/O supply voltage
V
PP
voltage supply (logic level)
Buffered enhanced factory programming V
PP
Maximum V
PP
hours
V
PP
= V
PPH
V
PP
= V
PPL
V
PP
= V
PPH
1. T
A
= ambient temperature.
2. In typical operation, V
PP
program voltage is V
PPL
.
CMOS inputs
TTL inputs
Min
–40
1.7
1.7
2.4
0.9
8.5
–
100,000
–
Max
+85
2.0
3.6
3.6
3.6
9.5
80
–
1000
Unit
°C
V
Notes
1
2
Hours
Cycles
BLOCK
Array blocks
ERASE cycles
Notes:
PDF: 09005aef845667b3
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
73
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2013 Micron Technology, Inc. All rights reserved.
MICRON [ MICRON TECHNOLOGY ]
