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M29W256GH70N6E 参数 Datasheet PDF下载

M29W256GH70N6E图片预览
型号: M29W256GH70N6E
PDF下载: 下载PDF文件 查看货源
内容描述: 并行NOR闪存的嵌入式存储器 [Parallel NOR Flash Embedded Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 89 页 / 1158 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
M29W256GH, M29W256GL
Features
• Supply voltage
– V
CC
= 2.7–3.6V (program, erase, read)
– V
CCQ
= 1.65–3.6V (I/O buffers)
– V
PPH
= 12V for fast program (optional)
• Asynchronous random/page read
– Page size: 8words or 16 bytes
– Page access: 25, 30ns
– Random access: 60ns
, 70, 80ns
• Fast program commands: 32-word (64-byte) write
buffer
• Enhanced buffered program commands: 256-word
• Program time
– 16µs per byte/word TYP
– Chip program time: 10s with V
PPH
and 16s with-
out V
PPH
• Memory organization
– Uniform blocks: 256 main blocks, 128-Kbytes or
64-Kwords each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume capability
– Read from any block during a PROGRAM SUS-
PEND operation
– Read or program another block during an ERASE
SUSPEND operation
• Unlock bypass, block erase, chip erase, write to buf-
fer and program
– Fast buffered/batch programming
– Fast block/chip erase
• V
PP
/WP# pin protection
– Protects first or last block regardless of block
protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
• Extended memory block
– 128-word (256-byte) memory block for perma-
nent, secure identification
– Programmed or locked at the factory or by the
customer
• Common flash interface
– 64-bit security code
• Low power consumption: Standby and automatic
mode
• JESD47H-compliant
– 100,000 minimum PROGRAM/ERASE cycles per
block
– Data retention: 20 years (TYP)
• 65nm single-level cell (SLC) process technology
• Fortified BGA, TBGA, and TSOP packages
• Green packages available
– RoHS-compliant
– Halogen-free
• Automotive device grade (6): temperature –40°C to
+85°C (automotive grade certified)
• Automotive device grade (3): temperature –40°C to
+125°C (automotive grade certified)
Note:
1. The 60ns device is available upon customer
request.
PDF: 09005aef84bd3b68
m29w_256mb.pdf - Rev. B 5/13 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2013 Micron Technology, Inc. All rights reserved.