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M58BW016FB 参数 Datasheet PDF下载

M58BW016FB图片预览
型号: M58BW016FB
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 512千位×32 ,引导块,爆) [16 Mbit (512 Kbit x 32, boot block, burst)]
分类和应用:
文件页数/大小: 70 页 / 1283 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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M58BW016DB M58BW016DT
M58BW016FT M58BW016FB
16 Mbit (512 Kbit x 32, boot block, burst)
3 V supply Flash memories
Features
Supply voltage
– V
DD
= 2.7 V to 3.6 V for program, erase
and read
– V
DDQ
= V
DDQIN
= 2.4 V to 3.6 V for I/O
buffers
– V
PP
= 12 V for fast program (optional)
High performance
– Access times: 70, 80 ns
– 56 MHz effective zero wait-state burst read
– Synchronous burst read
– Asynchronous page read
Hardware block protection
– WP pin for write protect of the 2 outermost
parameter blocks and all main blocks
– RP pin for write protect of all blocks
Optimized for FDI drivers
– Fast program / erase suspend latency
time < 6 µs
– Common Flash interface
Memory blocks
– 8 parameters blocks (top or bottom)
– 31 main blocks
Low power consumption
– 5 µA typical deep power-down
– 60 µA typical standby for M58BW016DT/B
150 µA typical standby for M58BW016FT/B
– Automatic standby after asynchronous
read
Electronic signature
– Manufacturer code: 20h
– Top device code: 8836h
– Bottom device code: 8835h
100 K write/erase cycling + 20 years data
retention (minimum)
High reliability level with over 1 M write/erase
cycling sustained
PQFP80 (T)
LBGA
LBGA80 10 × 12 mm
RoHS packages available
July 2011
Rev 18
1/70
www.numonyx.com