4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F004B3
MT28F400B3
3V Only, Dual Supply (Smart 3)
FEATURES
• Seven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
• Smart 3 technology (B3):
3.3V ±0.3V V
CC
3.3V ±0.3V V
PP
application programming
5V ±10% V
PP
application/production programming
1
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
(MT28F400B3, 256K x 16/512K x 8)
• Byte-wide READ and WRITE only
(MT28F004B3, 512K x 8)
• TSOP and SOP packaging options
40-Pin TSOP Type I 48-Pin TSOP Type I
44-Pin SOP
OPTIONS
• Timing
80ns access
• Configurations
512K x 8
256K x 16/512K x 8
• Boot Block Starting Word Address
Top (3FFFFh)
Bottom (00000h)
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Extended (-40ºC to +85ºC)
• Packages
44-pin SOP (MT28F400B3)
48-pin TSOP Type I (MT28F400B3)
40-pin TSOP Type I (MT28F004B3)
NOTE:
MARKING
-8
MT28F004B3
MT28F400B3
T
B
None
ET
SG
WG
VG
GENERAL DESCRIPTION
The MT28F004B3 (x8) and MT28F400B3 (x16/x8)
are nonvolatile, electrically block-erasable (flash), pro-
grammable memory devices containing 4,194,304 bits
organized as 262,144 words (16 bits) or 524,288 bytes (8
bits). Writing or erasing the device is done with either a
3.3V or 5V V
PP
voltage, while all operations are performed
with a 3.3V V
CC
. Due to process technology advances,
5V V
PP
is optimal for application and production pro-
gramming. These devices are fabricated with Micron’s
advanced 0.18µm CMOS floating-gate process.
The MT28F004B3 and MT28F400B3 are organized
into seven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal write
or erase sequences. This block may be used to store
code implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
1. This generation of devices does not support 12V V
PP
compatibility production programming; however, 5V V
PP
application production programming can be used with no
loss of performance.
Part Number Example:
MT28F400B3SG-8 T
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 – Rev. 3, Pub. 12/01
1
©2001, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
MICRON [ MICRON TECHNOLOGY ]
