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MT28F640J3RG-11ET 参数 Datasheet PDF下载

MT28F640J3RG-11ET图片预览
型号: MT28F640J3RG-11ET
PDF下载: 下载PDF文件 查看货源
内容描述: Q- FLASHTM记忆 [Q-FLASHTM MEMORY]
分类和应用:
文件页数/大小: 52 页 / 540 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
COMMAND DEFINITIONS
When the V
PEN
voltage is less than V
PPLK
, only READ
operations from the status register, query, identifier
codes, or blocks are enabled. Placing V
PENH
on V
PEN
en-
ables BLOCK ERASE, PROGRAM, and LOCK BIT CON-
FIGURATION operations. Device operations are se-
lected by writing specific commands into the CEL, as
seen in Table 4.
Table 4
Micron Q-Flash Memory Command Set Definitions
1
COMMAND
SCALABLE
BUS
OR BASIC CYCLES
COMMAND REQ’D
SET
2
SCS/BCS
SCS/BCS
SCS
SCS/BCS
SCS/BCS
SCS/BCS
SCS/BCS
1
2
2
2
1
>2
2
FIRST BUS CYCLE
OPER
3
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
SECOND BUS CYCLE
ADDR
4
DATA
5, 6
NOTES*
IA
QA
X
ID
QD
SRD
8
7
ADDR
4
DATA
5, 6
OPER
3
X
X
X
X
X
BA
X
FFh
90h
98h
70h
50h
E8h
40h
or
10h
20h
B0h
D0h
B8h
60h
60h
C0h
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
READ
READ
READ
READ ARRAY
READ IDENTIFIER
CODES
READ QUERY
READ STATUS
REGISTER
CLEAR STATUS
REGISTER
WRITE TO BUFFER
WORD/BYTE
PROGRAM
BLOCK ERASE
BLOCK ERASE,
PROGRAM SUSPEND
BLOCK ERASE,
PROGRAM RESUME
CONFIGURATION
SET BLOCK LOCK BITS
CLEAR BLOCK
LOCK BITS
PROTECTION
PROGRAM
BA
PA
N
PD
9, 10, 11
12, 13
SCS/BCS
SCS/BCS
SCS/BCS
SCS
SCS
SCS
2
1
1
2
2
2
2
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
BA
X
X
X
X
X
X
WRITE
BA
D0h
11, 12
12, 14
12
X
BA
X
PA
CC
01h
D0h
PD
15
*Notes appear on the next page.
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_7.p65 – Rev. 6, Pub. 8/02
11
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.