ADVANCE
‡
64Mb: x16, x32
SYNCFLASH MEMORY
SYNCFLASH
®
MEMORY
FEATURES
• 125 MHz SDRAM-compatible read timing
• Fully synchronous; all signals registered on
positive edge of system clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access
• Programmable burst lengths:
1, 2 , 4, 8, or full page (read)
1, 2, 4, or 8 (write)
• LVTTL-compatible inputs and outputs
• 3.0V–3.6V V
CC
, 1.65V–1.95V V
CC
Q
Additional V
HH
hardware protect mode (RP#)
• Supports CAS latency of 1, 2, and 3
• Four-bank architecture supports true concurrent
operation with zero latency
Read any bank while programming or erasing
any other bank
• Deep power-down mode: 50µA (MAX)
• Cross-compatible Flash memory command set
• Operating temperature range of -40
o
C to +85
o
C
MT28S4M16B1LL – 1 Meg x 16 x 4 banks
MT28S2M32B1LL – 512K x 32 x 4 banks
PIN ASSIGNMENT (Top View)
90-Ball FBGA – 2 Meg x 32
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
DQ26
2
DQ24
3
V
SS
7
Vcc
8
DQ23
9
DQ21
DQ28
VccQ
V
SS
Q
VccQ
V
SS
Q
DQ19
V
SS
Q
DQ27
DQ25
DQ22
DQ20
VccQ
V
SS
Q
DQ29
DQ30
DQ17
DQ18
VccQ
VccQ
DQ31
NC
NC
DQ16
VssQ
V
SS
DQM3
A3
A2
DQM2
Vcc
A4
A5
A6
A10
A0
A1
A7
A8
VccP
NC
BA1
NC
CLK
CKE
A9
BA0
CS#
RAS#
DQM1
RP#
DNU
CAS#
WE#
DQM0
VccQ
DQ8
Vss
Vcc
DQ7
V
SS
Q
V
SS
DQ10
DQ9
DQ6
DQ5
VccQ
V
SS
Q
DQ12
DQ14
DQ1
DQ3
VccQ
DQ11
VccQ
V
SS
Q
VccQ
V
SS
Q
DQ4
DQ13
DQ15
Vss
Vcc
DQ0
DQ2
OPTIONS
• Configuration
4 Meg x 16 (1 Meg x 16 x 4 banks)
2 Meg x 32 (512K x 32 x 4 banks)
• Read Timing (Cycle Time)
10ns (100 MHz) @ CL2
8ns (125 MHz) @ CL3
10ns (100 MHz) @ CL3
• Package
90-ball FBGA
Part Number Example:
MARKING
4M16
2M32
-8
-8
-10
FG
90-Ball FBGA – 4 Meg x 16
1
A
B
C
D
E
F
G
H
J
K
DNU
2
DNU
3
V
SS
7
Vcc
8
DNU
9
DNU
DNU
VccQ
V
SS
Q
VccQ
V
SS
Q
DNU
V
SS
Q
DNU
DNU
DNU
DNU
VccQ
V
SS
Q
DNU
DNU
DNU
DNU
VccQ
VccQ
DNU
NC
NC
DNU
VssQ
V
SS
MCL
A3
A2
MCL
Vcc
A4
A5
A6
A10
A0
A1
MT28S4M16B1LLFG-8
A7
A8
VccP
NC
BA1
NC
KEY TIMING PARAMETERS
ACCESS
SPEED
CLOCK
TIME
SETUP HOLD
GRADE FREQUENCY CL = 1* CL = 2* CL = 3* TIME TIME
-8
-10
-8
125 MHz
100 MHz
100 MHz
-
-
-
-
-
8ns
7ns
7ns
-
2ns
2ns
2ns
1ns
1ns
CLK
CKE
A11
BA0
CS#
RAS#
DQM1
RP#
A9
CAS#
WE#
DQM0
L
M
N
P
R
VccQ
DQ8
Vss
Vcc
DQ7
V
SS
Q
V
SS
DQ10
DQ9
DQ6
DQ5
VccQ
V
SS
Q
DQ12
DQ14
DQ1
DQ3
VccQ
DQ11
VccQ
V
SS
Q
VccQ
V
SS
Q
DQ4
DQ13
DQ15
Vss
Vcc
DQ0
DQ2
1ns
NOTE:
1. The # symbol indicates signal is active LOW.
* CL = CAS (READ) Latency
64Mb: x16, x32 SyncFlash
MT28S4M16B1LL.p65 – Rev. 1, Pub. 5/02
1
©2002, Micron Technology, Inc.
‡
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
MICRON [ MICRON TECHNOLOGY ]
