欢迎访问ic37.com |
会员登录 免费注册
发布采购

MT46V32M16TG-75L 参数 Datasheet PDF下载

MT46V32M16TG-75L图片预览
型号: MT46V32M16TG-75L
PDF下载: 下载PDF文件 查看货源
内容描述: 双倍数据速率DDR SDRAM [DOUBLE DATA RATE DDR SDRAM]
分类和应用: 内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 68 页 / 2546 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT46V32M16TG-75L的Datasheet PDF文件第6页浏览型号MT46V32M16TG-75L的Datasheet PDF文件第7页浏览型号MT46V32M16TG-75L的Datasheet PDF文件第8页浏览型号MT46V32M16TG-75L的Datasheet PDF文件第9页浏览型号MT46V32M16TG-75L的Datasheet PDF文件第11页浏览型号MT46V32M16TG-75L的Datasheet PDF文件第12页浏览型号MT46V32M16TG-75L的Datasheet PDF文件第13页浏览型号MT46V32M16TG-75L的Datasheet PDF文件第14页  
ADVANCE  
512Mb: x4, x8, x16  
DDR SDRAM  
the sequential and the interleaved burst types.  
Reserved states should not be usedꢀ as unknown  
operation or incompatibility with future versions may  
result.  
figuration). The remaining (least significant) address  
bit(s) is (are) used to select the starting location within  
the block. The programmed burst length applies to  
both READ and WRITE bursts.  
When a READ or WRITE command is issuedꢀ a block  
of columns equal to the burst length is effectively se-  
lected. All accesses for that burst take place within this  
blockꢀ meaning that the burst will wrap within the block  
if a boundary is reached. The block is uniquely se-  
lected by A1-Ai when the burst length is set to twoꢀ by  
A2-Ai when the burst length is set to four and by A3-Ai  
when the burst length is set to eight (where Ai is the  
most significant column address bit for a given con-  
Burst Type  
Accesses within a given burst may be programmed  
to be either sequential or interleaved; this is referred to  
as the burst type and is selected via bit M3.  
The ordering of accesses within a burst is deter-  
mined by the burst lengthꢀ the burst type and the start-  
ing column addressꢀ as shown in Table 1.  
BA1  
A8  
A6 A5 A4  
A1  
A0  
Address Bus  
BA0 A12 A11 A10  
A9  
A7  
A3 A2  
Table 1  
Burst Definition  
14 13  
11  
9
8
6
5
4
1
12  
10  
7
3
2
0
Mode Register (Mx)  
0* 0*  
Operating Mode  
CAS Latency BT Burst Length  
Burst  
StartingColumn  
Address  
OrderofAccessesWithinaBurst  
Length  
Type=Sequential  
Type=Interleaved  
* M14 and M13 (BA0 and BA1)  
must be 0, 0to select the  
base mode register (vs. the  
extended mode register).  
A0  
0
1
Burst Length  
0-1  
1-0  
0-1  
1-0  
M2 M1 M0  
M3 = 0  
Reserved  
2
M3 = 1  
Reserved  
2
2
4
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
A1 A0  
4
4
0
0
1
1
0
1
0
1
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
8
8
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
A2 A1 A0  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0  
2-3-4-5-6-7-0-1  
3-4-5-6-7-0-1-2  
4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4  
6-7-0-1-2-3-4-5  
7-0-1-2-3-4-5-6  
0-1-2-3-4-5-6-7  
1-0-3-2-5-4-7-6  
2-3-0-1-6-7-4-5  
3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3  
5-4-7-6-1-0-3-2  
6-7-4-5-2-3-0-1  
7-6-5-4-3-2-1-0  
Burst Type  
Sequential  
Interleaved  
M3  
0
1
8
CAS Latency  
Reserved  
Reserved  
2
M6 M5 M4  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved  
Reserved  
Reserved  
2.5  
NOTE: 1. For a burst length of two, A1-Ai select the two-  
data-element block; A0 selects the first access  
within the block.  
Reserved  
2. For a burst length of four, A2-Ai select the four-  
data-element block; A0-A1 select the first access  
within the block.  
3. For a burst length of eight, A3-Ai select the eight-  
data-element block; A0-A2 select the first access  
within the block.  
4. Whenever a boundary of the block is reached  
within a given sequence above, the following  
access wraps within the block.  
M12 M11 M10 M9 M8 M7  
M6-M0  
Valid  
Valid  
-
Operating Mode  
Normal Operation  
0
0
-
0
0
-
0
0
-
0
0
-
0
1
-
0
0
-
Normal Operation/Reset DLL  
All other states reserved  
Figure 1  
Mode Register Definition  
512Mb: x4, x8, x16 DDR SDRAM  
512Mx4x8x16DDR_B.p65 Rev. B; Pub 4/01  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2001,MicronTechnology,Inc.  
10