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MT46V64M8 参数 Datasheet PDF下载

MT46V64M8图片预览
型号: MT46V64M8
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB : X4,X8 , X16 DDR SDRAM特点 [512Mb: x4, x8, x16 DDR SDRAM Features]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 91 页 / 3762 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb: x4, x8, x16 DDR SDRAM
Features
Double Data Rate (DDR) SDRAM
MT46V128M4 – 32 Meg x 4 x 4 banks
MT46V64M8 – 16 Meg x 8 x 4 banks
MT46V32M16 – 8 Meg x 16 x 4 banks
Features
• V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V
• V
DD
= +2.6V ±0.1V, V
DD
Q = +2.6V ±0.1V (DDR400)
• Bidirectional data strobe (DQS) transmitted/
received with data, i.e., source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data
(x16 has two – one per byte)
• Programmable burst lengths: 2, 4, or 8
• Auto refresh
64ms, 8192-cycle(Commercial and industrial)
16ms, 8192-cycle (Automotive)
• Self refresh (not available on AT devices)
• Longer-lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2 compatible)
• Concurrent auto precharge option is supported
t
RAS lockout supported (
t
RAP =
t
RCD)
Options
• Configuration
128 Meg x 4 (32 Meg x 4 x 4 banks)
64 Meg x 8 (16 Meg x 8 x 4 banks)
32 Meg x 16 (8 Meg x 16 x 4 banks)
• Plastic package
66-pin TSOP
66-pin TSOP (Pb-free)
60-ball FBGA (10mm x 12.5mm)
60-ball FBGA (10mm x 12.5mm) (Pb-free)
• Timing – cycle time
5ns @ CL = 3 (DDR400B)
6ns @ CL = 2.5 (DDR333) (FBGA only)
6ns @ CL = 2.5 (DDR333) (TSOP only)
7.5ns @ CL = 2 (DDR266)
7.5ns @ CL = 2 (DDR266A)
7.5ns @ CL = 2.5 (DDR266B)
• Self refresh
Standard
Low-power self refresh
• Temperature rating
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
Automotive (–40°C to +105°C)
• Revision
x4, x8
x4, x8, x16
Notes: 1. End of life.
Marking
128M4
64M8
32M16
TG
P
FN
BN
-5B
-6
-6T
-75E
1
-75Z
1
-75
1
None
L
None
IT
AT
:D
1
:F
Table 1:
Key Timing Parameters
CL = CAS (READ) latency; data-out window is MIN clock rate with 50% duty cycle at CL = 2, CL = 2.5, or CL = 3
Clock Rate (MHz)
CL = 2
133
133
133
133
100
CL = 2.5
167
167
167
133
133
CL = 3
200
n/a
n/a
n/a
n/a
Speed
Grade
-5B
-6
6T
-75E/-75Z
-75
Data-Out
Window
1.6ns
2.1ns
2.0ns
2.5ns
2.5ns
Access
Window
±0.70ns
±0.70ns
±0.70ns
±0.75ns
±0.75ns
DQS–DQ
Skew
+0.40ns
+0.40ns
+0.45ns
+0.50ns
+0.50ns
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
512Mb_DDR_x4x8x16_D1.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000 Micron Technology, Inc. All rights reserved.