512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Operations
Figure 12:
Consecutive READ Bursts
T0
CLK
T1
T2
T3
T4
T5
T6
COMMAND
READ
NOP
NOP
NOP
READ
NOP
NOP
X
= 1
cycle
ADDRESS
BANK,
COL
n
BANK,
COL
b
DQ
CL
= 2
D
OUT
n
D
OUT
n
+1
D
OUT
n
+2
D
OUT
n
+3
D
OUT
b
T0
CLK
T1
T2
T3
T4
T5
T6
T7
COMMAND
READ
NOP
NOP
NOP
READ
NOP
NOP
NOP
X
= 2
cycles
ADDRESS
BANK,
COL
n
BANK,
COL
b
DQ
CL
= 3
D
OUT
n
D
OUT
n
+1
D
OUT
n
+2
D
OUT
n
+3
D
OUT
b
DON’T
CARE
Notes:
1. Each READ command may be to any bank. DQM is LOW.
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. H 6/07 EN
25
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