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MT48LC16M8A2TG-75LIT 参数 Datasheet PDF下载

MT48LC16M8A2TG-75LIT图片预览
型号: MT48LC16M8A2TG-75LIT
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM [SYNCHRONOUS DRAM]
分类和应用: 内存集成电路光电二极管动态存储器时钟
文件页数/大小: 59 页 / 1835 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb: x4, x8, x16  
SDRAM  
retains data without external clocking. The SELF RE-  
FRESH command is initiated like an AUTO REFRESH  
command except CKE is disabled (LOW). Once the SELF  
REFRESH command is registered, all the inputs to the  
SDRAM become “Don’t Care” with the exception of CKE,  
which must remain LOW.  
AUTO REFRESH  
AUTO REFRESH is used during normal operation of  
the SDRAM and is analogous to CAS#-BEFORE-RAS#  
(CBR) REFRESH in conventional DRAMs. This  
command is nonpersistent, so it must be issued each  
time a refresh is required. All active banks must be  
PRECHARGED prior to issuing an AUTO REFRESH  
command. The AUTO REFRESH command should not  
be issued until the minimum tRP has been met after the  
PRECHARGE command as shown in the operation sec-  
tion.  
The addressing is generated by the internal refresh  
controller. This makes the address bits “Don’t Care”  
duringanAUTOREFRESHcommand.The128MbSDRAM  
requires 4,096 AUTO REFRESH cycles every 64ms (tREF),  
regardless of width option. Providing a distributed AUTO  
REFRESH command every 15.625µs will meet the refresh  
requirementandensurethateachrowisrefreshed. Alter-  
natively, 4,096AUTOREFRESHcommandscanbeissued  
in a burst at the minimum cycle rate (tRFC), once every  
64ms.  
Once self refresh mode is engaged, the SDRAM pro-  
vides its own internal clocking, causing it to perform its  
own AUTO REFRESH cycles. The SDRAM must remain in  
t
self refresh mode for a minimum period equal to RAS  
and may remain in self refresh mode for an indefinite  
period beyond that.  
The procedure for exiting self refresh requires a se-  
quence of commands. First, CLK must be stable (stable  
clock is defined as a signal cycling within timing con-  
straints specified for the clock pin) prior to CKE going  
back HIGH. Once CKE is HIGH, the SDRAM must have  
NOP commands issued (a minimum of two clocks) for  
tXSR because time is required for the completion of any  
internal refresh in progress.  
Upon exiting the self refresh mode, AUTO REFRESH  
commands must be issued every 15.625µs or less as both  
SELF REFRESH and AUTO REFRESH utilize the row re-  
fresh counter.  
SELF REFRESH  
The SELF REFRESH command can be used to retain  
data in the SDRAM, even if the rest of the system is  
powereddown.Whenintheselfrefreshmode,theSDRAM  
128Mb: x4, x8, x16 SDRAM  
128MSDRAM_E.p65 Rev. E; Pub. 1/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2001, Micron Technology, Inc.  
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