TECHNOLOGY, INC.
4 MEG x 4
EDO DRAM
CAPACITANCE
PARAMETER
Input Capacitance: Address pins
Input Capacitance: RAS#, CAS#, WE#, OE#
Input/Output Capacitance: DQ
SYMBOL
C
I
1
C
I
2
C
IO
MAX
5
7
7
UNITS
pF
pF
pF
NOTES
8
8
8
AC ELECTRICAL CHARACTERISTICS
(Notes: 2, 3, 9, 10, 11, 12, 17) (V
CC
[MIN]
≤
V
CC
≤
V
CC
[MAX])
AC CHARACTERISTICS
PARAMETER
Access time from column address
Column address setup to CAS# precharge
Column address hold time (referenced to RAS#)
Column address setup time
Row address setup time
Column address to WE# delay time
Access time from CAS#
Column address hold time
CAS# pulse width
CAS# LOW to “don’t care” during Self Refresh
CAS# hold time (CBR Refresh)
CAS# to output in Low-Z
Data output hold after next CAS# LOW
CAS# precharge time
Access time from CAS# precharge
CAS# to RAS# precharge time
CAS# hold time
CAS# setup time (CBR Refresh)
CAS# to WE# delay time
Write command to CAS# lead time
Data-in hold time
Data-in setup time
Output disable
Output Enable
OE# hold time from WE# during
READ-MODIFY-WRITE cycle
OE# HIGH hold from CAS# HIGH
OE# HIGH pulse width
OE# LOW to CAS# HIGH setup time
Output buffer turn-off delay
-5
SYMBOL
t
AA
t
ACH
t
AR
t
ASC
t
ASR
t
AWD
t
CAC
t
CAH
t
CAS
t
CHD
t
CHR
t
CLZ
t
COH
t
CP
t
CPA
t
CRP
t
CSH
t
CSR
t
CWD
t
CWL
t
DH
t
DS
t
OD
t
OE
t
OEH
t
OEHC
t
OEP
t
OES
t
OFF
-6
MAX
25
MIN
15
45
0
0
49
13
15
10
10
15
10
0
3
10
5
45
5
35
10
10
0
0
10
10
5
5
0
10,000
MAX
30
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
MIN
12
38
0
0
42
8
8
15
8
0
3
8
5
38
5
28
8
8
0
0
8
5
5
4
0
13
14
10,000
7
15
28
35
13
16
16
17
18
18
12
12
15
15
12
15
20
4 Meg x 4 EDO DRAM
D47.pm5 – Rev. 3/97
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1997,
Micron Technology, Inc.
MICRON [ MICRON TECHNOLOGY ]
