TECHNOLOGY, INC.
4 MEG x 4
EDO DRAM
AC ELECTRICAL CHARACTERISTICS
(Notes: 2, 3, 9, 10, 11, 12, 17) (V
CC
[MIN]
≤
V
CC
≤
V
CC
[MAX])
AC CHARACTERISTICS
PARAMETER
OE# setup prior to RAS# during
HIDDEN REFRESH cycle
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column address delay time
Row address hold time
RAS# pulse width
RAS# pulse width (EDO PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
Read command hold time (referenced to CAS#)
Read command setup time
Refresh period (2,048 cycles)
Refresh period (4,096 cycles)
Refresh period S version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
Read command hold time (referenced to RAS#)
RAS# hold time
READ WRITE cycle time
RAS# to WE# delay time
Write command to RAS# lead time
Transition time (rise or fall)
Write command hold time
Write command hold time (referenced to RAS#)
WE# command setup time
Output disable delay from WE#
Write command pulse width
WE# pulse to disable at CAS# HIGH
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
-5
SYMBOL
t
ORD
t
PC
t
PRWC
t
RAC
t
RAD
t
RAH
t
RAS
t
RASP
t
RASS
t
RC
t
RCD
t
RCH
t
RCS
t
REF
t
REF
t
REF
t
RP
t
RPC
t
RPS
t
RRH
t
RSH
t
RWC
t
RWD
t
RWL
t
T
t
WCH
t
WCR
t
WCS
t
WHZ
t
WP
t
WPZ
t
WRH
t
WRP
-6
MAX
MIN
0
25
56
50
60
12
10
60
60
100
104
14
0
0
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
MIN
0
20
47
9
9
50
50
100
84
11
0
0
19
21
10,000
125,000
10,000
125,000
22
23
32
64
128
30
5
90
0
13
116
67
13
2
8
38
0
0
5
10
8
8
40
5
105
0
15
140
79
15
2
10
45
0
0
5
10
10
10
32
64
128
23
13
50
50
13
12
15
4 Meg x 4 EDO DRAM
D47.pm5 – Rev. 3/97
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1997,
Micron Technology, Inc.
MICRON [ MICRON TECHNOLOGY ]
