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MT54W4MH9BF-5 参数 Datasheet PDF下载

MT54W4MH9BF-5图片预览
型号: MT54W4MH9BF-5
PDF下载: 下载PDF文件 查看货源
内容描述: 36MB QDR⑩II SRAM 2字突发 [36Mb QDR⑩II SRAM 2-WORD BURST]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 27 页 / 522 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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ADVANCE
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36
1.8V V
DD
, HSTL, QDRIIb2 SRAM
CLOCK CONSIDERATIONS
This device utilizes internal delay-locked loops for
maximum output data valid window. It can be placed
into a stopped-clock state to minimize power with a
modest restart time of 1,024 clock cycles. Circuitry
automatically resets the DLL when the absence of
input clock is detected. See Micron Technical Note TN-
54-02 for more information on clock DLL start-up pro-
cedures.
DEPTH EXPANSION
Port select inputs are provided for the read and
write ports. This allows for easy depth expansion. Both
port selects are sampled on the rising edge of K only.
Each port can be independently selected and dese-
lected and does not affect the operation of the oppo-
site port. All pending transactions are completed prior
to a port deselecting. Depth expansion requires repli-
cating R# and W# control signals for each bank if it is
desired to have the bank independent of READ and
WRITE operations.
SINGLE CLOCK MODE
The SRAM can be used with the single K, K# clock
pair by tying C and C# HIGH. In this mode, the SRAM
will use K and K# in place of C and C#. This mode pro-
vides the most rapid data output but does not com-
pensate for system clock skew and flight times.
36Mb: 1.8V V
DD
, HSTL, QDRIIb2 SRAM
MT54W2MH18B_A.fm - Rev 9/02
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology Inc.