32Mb, 3V, Multiple I/O Serial Flash Memory
READ IDENTIFICATION Operations
READ IDENTIFICATION Operations
READ ID and MULTIPLE I/O READ ID Commands
To execute the READ ID or MULTIPLE I/O READ ID commands, S# is driven LOW and
the command code is input on DQn. The device outputs the information shown in the
tables below. If an ERASE or PROGRAM cycle is in progress when the command is exe-
cuted, the command is not decoded and the command cycle in progress is not affected.
When S# is driven HIGH, the device goes to standby. The operation is terminated by
driving S# HIGH at any time during data output.
Table 18: Data/Address Lines for READ ID and MULTIPLE I/O READ ID Commands
Unique ID
is Output
Command Name
READ ID
Data In
DQ0
Data Out
DQ0
Extended
Yes
Dual
No
Quad
No
Yes
No
MULTIPLE I/O READ ID
DQ[3:0]
DQ[1:0]
No
Yes
Yes
1. Yes in the protocol columns indicates that the command is supported and has the same
functionality and command sequence as other commands marked Yes.
Note:
Table 19: Read ID Data Out
Size
(Bytes) Name
Content Value
Assigned by
1
2
Manufacturer ID
Device ID
20h
JEDEC
Memory Type
BAh
Manufacturer
Factory
Memory Capacity
Unique ID
16h (32Mb)
17
1 Byte: Length of data to follow
10h
2 Bytes: Extended device ID and device
configuration information
ID and information such as uniform
architecture, and HOLD
or RESET functionality
14 Bytes: Customized factory data
Unique ID code (n read-only bytes)
1. The 17 bytes of information in the unique ID is read by the READ ID command, but can-
not be read by the MULTIPLE I/O READ ID command.
Note:
Table 20: Extended Device ID, First Byte
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Reserved
Reserved
1 = Reserved
0 = Standard BP register, XIP bit setting:
Volatile configuration
HOLD#/RESET#:
0 = HOLD
Addressing:
0 = by byte
Architecture:
00 = Uniform
scheme
0 = Required
1 = RESET
1 = Not required
PDF: 09005aef84566622
n25q_32mb_3v_65nm.pdf - Rev. G 9/12 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
35
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