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N25Q256A13EF840E 参数 Datasheet PDF下载

N25Q256A13EF840E图片预览
型号: N25Q256A13EF840E
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q256A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q256A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1199 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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3V, 256Mb: Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB Sector Erase
N25Q256A
Features
SPI-compatible serial bus interface
Double transfer rate (DTR) mode
2.7–3.6V single supply voltage
108 MHz (MAX) clock frequency supported for all
protocols in single transfer rate (STR) mode
54 MHz (MAX) clock frequency supported for all
protocols in DTR mode
Dual/quad I/O instruction provides increased
throughput up to 54 MB/s
Supported protocols
– Extended SPI, dual I/O, and quad I/O
– DTR mode supported on all
Execute-in-place (XIP) mode for all three protocols
– Configurable via volatile or nonvolatile registers
– Enables memory to work in XIP mode directly af-
ter power-on
PROGRAM/ERASE SUSPEND operations
Continuous read of entire memory via a single com-
mand
– Fast read
– Quad or dual output fast read
– Quad or dual I/O fast read
Flexible to fit application
– Configurable number of dummy cycles
– Output buffer configurable
Software reset
3-byte and 4-byte addressability mode supported
64-byte, user-lockable, one-time programmable
(OTP) dedicated area
An additional reset pin is available on the following
devices
– N25Q256A83ESF40x, N25Q256A83E1240x
Erase capability
– Subsector erase 4KB uniform granularity blocks
– Sector erase 64KB uniform granularity blocks
– Full-chip erase
• Write protection
– Software write protection applicable to every
64KB sector via volatile lock bit
– Hardware write protection: protected area size
defined by five nonvolatile bits (BP0, BP1, BP2,
BP3, and TB)
– Additional smart protections, available upon re-
quest
• Electronic signature
– JEDEC-standard 2-byte signature (BA19h)
– Unique ID of 17 read-only bytes including: addi-
tional extended device ID (EDID) to identify de-
vice factory options; customized factory data
• Minimum 100,000 ERASE cycles per sector
• More than 20 years data retention
• Packages JEDEC standard, all RoHS compliant
– V-PDFN-8/8mm x 6mm (also known as SON,
DFPN, MLP MLF)
,
– SOP2-16/300mils (also known as SO16W, SO16-
Wide, SOIC-16)
– T-PBGA-24b05/6mm x 8mm (also known as
TBGA24)
PDF: 09005aef84566603
n25q_256mb_65nm.pdf - Rev. Q 05/13 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.