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N25Q512A13GF840E 参数 Datasheet PDF下载

N25Q512A13GF840E图片预览
型号: N25Q512A13GF840E
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q512A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1214 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB Sector Erase
N25Q512A
Features
Stacked device (two 256Mb die)
SPI-compatible serial bus interface
Double transfer rate (DTR) mode
2.7–3.6V single supply voltage
108 MHz (MAX) clock frequency supported for all
protocols in single transfer rate (STR) mode
54 MHz (MAX) clock frequency supported for all
protocols in DTR mode
Dual/quad I/O instruction provides increased
throughput up to 54 MB/s
Supported protocols
– Extended SPI, dual I/O, and quad I/O
– DTR mode supported on all
Execute-in-place (XIP) mode for all three protocols
– Configurable via volatile or nonvolatile registers
– Enables memory to work in XIP mode directly af-
ter power-on
PROGRAM/ERASE SUSPEND operations
Available protocols
– Available READ operations
– Quad or dual output fast read
– Quad or dual I/O fast read
Flexible to fit application
– Configurable number of dummy cycles
– Output buffer configurable
Software reset
Additional reset pin for selected part numbers
3-byte and 4-byte addressability mode supported
64-byte, user-lockable, one-time programmable
(OTP) dedicated area
Erase capability
– Subsector erase 4KB uniform granularity blocks
– Sector erase 64KB uniform granularity blocks
– Single die erase
• Write protection
– Software write protection applicable to every
64KB sector via volatile lock bit
– Hardware write protection: protected area size
defined by five nonvolatile bits (BP0, BP1, BP2,
BP3, and TB)
– Additional smart protections, available upon re-
quest
• Electronic signature
– JEDEC-standard 2-byte signature (BA20h)
– Unique ID code (UID): 17 read-only bytes,
including: Two additional extended device ID
bytes to identify device factory options; and cus-
tomized factory data (14 bytes)
• Minimum 100,000 ERASE cycles per sector
• More than 20 years data retention
• Packages – JEDEC-standard, all RoHS-compliant
– V-PDFN-8/8mm x 6mm (also known as SON,
DFPN, MLP MLF)
,
– SOP2-16/300mils (also known as SO16W, SO16-
Wide, SOIC-16)
– T-PBGA-24b05/6mm x 8mm (also known as
TBGA24)
Note:
1. Part numbers: N25Q512A83G1240X,
N25Q512A83GSF40X
PDF: 09005aef84752721
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.