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PC28F512P30BF 参数 Datasheet PDF下载

PC28F512P30BF图片预览
型号: PC28F512P30BF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm
Virtual Chip Enable Description
Virtual Chip Enable Description
The 2Gb device employs a virtual chip enable feature, which combines two 1Gb die
with a common chip enable, CE# for Easy BGA packages. The maximum address bit is
then used to select between the die pair with CE# asserted. When CE# is asserted and
the maximum address bit is LOW, the lower parameter die is selected; when CE# is as-
serted and the maximum address bit is HIGH, the upper parameter die is selected.
Table 3: Virtual Chip Enable Truth Table for Easy BGA Packages
Die Selected
Lower parameter die
Upper parameter die
CE#
L
L
A[MAX]
L
H
Figure 1: Easy BGA Block Diagram
Easy BGA (Dual Die) Top/Bottom
Parameter Configuration
CE#
WP#
OE#
WE#
CLK
ADV#
Top Parameter Die
RST#
VCC
VPP
VCCQ
Bottom Parameter Die
VSS
DQ[15:0]
A[MAX:1]
WAIT
PDF: 09005aef845667b3
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2013 Micron Technology, Inc. All rights reserved.