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PC48F4400P0VB0E 参数 Datasheet PDF下载

PC48F4400P0VB0E图片预览
型号: PC48F4400P0VB0E
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 98 页 / 1366 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
Features  
Discrete and MCP Part Numbering Information  
Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack-  
ages or for further information, contact your Micron sales representative. Part numbers can be verified at www.mi-  
cron.com. Feature and specification comparison by device type is available at www.micron.com/products. Con-  
tact the factory for devices not found.  
Note: Not all part numbers listed here are available for ordering.  
Table 1: Discrete Part Number Information  
Part Number Category  
Category Details  
Package  
JS = 56-lead TSOP, lead free  
PC = 64-ball Easy BGA, lead-free  
RC = 64-ball Easy BGA, leaded  
28F = Micron Flash memory  
256 = 256Mb  
Product Line  
Density  
Product Family  
Parameter Location  
Lithography  
P30 (VCC = 1.7 to 2.0V; VCCQ = 1.7 to 3.6V)  
B/T = Bottom/Top parameter  
F = 65nm  
Features  
*
1. The last digit is assigned randomly to cover packaging media, features, or other specific configuration infor-  
mation. Sample part number: JS28F256P30BF*  
Note:  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.