256Mb and 512Mb (256Mb/256Mb), P30-65nm
Maximum Ratings and Operating Conditions
Maximum Ratings and Operating Conditions
Stresses greater than those listed can cause permanent damage to the device. This is
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated is not guaranteed.
Table 38: Maximum Ratings
Parameter
Temperature under bias
Storage temperature
Voltage on any signal (except V
CC
, V
PP
, and V
CCQ
)
V
PP
voltage
V
CC
voltage
V
CCQ
voltage
Output short circuit current
Notes:
Maximum Rating
–40°C to + 85 °C
–65°C to + 125 °C
–2V to +4V
–2V to +11.5V
–2V to +4V
–2V to +5.6V
100mA
1
1, 2
1
1
3
Notes
1. Voltages shown are specified with respect to V
SS
. During infrequent nonperiodic transi-
tions, the level may undershoot to –2V for periods less than 20ns or overshoot to V
CC
+
2V or V
CCQ
+ 2V or V
PP
+ 2V for periods less than 20ns.
2. Program/erase voltage is typically 1.7–2V; 9V can be applied for 80 hours maximum to-
tal, however, 9V program/erase voltage may reduce block cycling capability.
3. Output is shorted for no more than one second, and more than one output is not shor-
ted at one time.
Table 39: Operating Conditions
Symbol
T
A
V
CC
V
CCQ
V
PPL
V
PPH
t
PPH
Parameter
Operating temperature
V
CC
supply voltage
I/O supply voltage
V
PP
voltage supply (logic level)
Buffered enhanced factory programming V
PP
Maximum V
PP
hours
V
PP
= V
PPH
V
PP
= V
PPL
V
PP
= V
PPH
V
PP
= V
PPH
CMOS inputs
TTL inputs
Min
–40
1.7
1.7
2.4
0.9
8.5
–
100,000
–
–
Max
+85
2
3.6
3.6
3.6
9.5
80
–
1000
2500
Unit
°C
V
Notes
1
2
Hours
Cycles
BLOCK
Main and parameter blocks
ERASE cycles Main blocks
Parameter blocks
Notes:
1. T
A
= ambient temperature.
2. In typical operation, V
PP
program voltage is V
PPL
.
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN
79
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