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RC28F00AP30BF 参数 Datasheet PDF下载

RC28F00AP30BF图片预览
型号: RC28F00AP30BF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm
Program Operations
Program Resume
The RESUME command instructs the device to continue programming, and automati-
cally clears SR[7,2]. This command can be written to any address. If error bits are set,
the status register should be cleared before issuing the next command. RST# must re-
main de-asserted.
Program Protection
When V
PP
= V
IL
, absolute hardware write protection is provided for all device blocks. If
V
PP
is at or below V
PPLK
, programming operations halt and SR3 is set, indicating a V
PP
-
level error. Block lock registers are not affected by the voltage level on V
PP
; they may still
be programmed and read, even if V
PP
is less than V
PPLK
.
Figure 8: Example V
PP
Supply Connections
V
CC
V
PP
< 10K
Ω
V
CC
V
PP
V
CC
PROT#
V
CC
V
PP
-Factory programming with V
PP
= V
PPH
-Complete with program/erase
protection when V
PP
< V
PPLK
-Low voltage programming only
-Logic control of device protection
V
CC
V
PP
=
V
PPH
V
CC
V
PP
V
CC
V
CC
V
PP
-Low voltage and factory programming
-Low voltage programming only
-Full device protection unavailable
PDF: 09005aef845667b3
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
31
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2013 Micron Technology, Inc. All rights reserved.