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RC28F00AP30BF 参数 Datasheet PDF下载

RC28F00AP30BF图片预览
型号: RC28F00AP30BF
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 92 页 / 1225 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, 1Gb, 2Gb: P30-65nm
Common Flash Interface
Table 30: Partition Region 1: Partition and Erase Block Map Information (Continued)
Add.
Top
151:
--80
512Mb
Bottom
--80
Symm.
--FF
Top
--80
1Gb
Bottom
--80
Symm.
--FF
Symm.
Upper Die
--FF
2Gb
Symm.
Lower Die
--FF
Table 31: CFI Link Information – 2Gb
Length
4
Description
CFI Link field bit definitions:
Bits 0 - 9 = Address offset (within 32Mb segment of referenced CFI table)
Bits 10 - 27 = nth 32Mb segment of referenced CFI table
Bits 28 - 30 = Memory Type
Bit 31 = Another CFI link field immediately follows
CFI Link field quantity subfield definitions:
Bits 0 - 3 = Quantity field (n such that n+1 equals quantity)
Bit 4 = Table and die relative location
Bit 5 = Link field and table relative location
Bits 6 - 7 = Reserved
Note:
Address
144:
145:
146:
147
148:
ASCII Value
(DQ[7:0])
See Note 1
1
1. See "Partition Region 1: Partition and Erase Block Map Information" table.
PDF: 09005aef845667b3
p30_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. B 12/13 EN
61
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2013 Micron Technology, Inc. All rights reserved.