DATA SHEET
HAL1xy
2.5. Characteristics
at T
J
=
−20
°C to +125 °C, V
DD
= 3.8 V to 24 V, GND = 0 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for T
J
= 25 °C and V
DD
= 12 V.
Symbol
I
DD
V
DDZ
V
OZ
V
OL
I
OH
f
osc
Parameter
Supply Current over
Temperature Range
Overvoltage Protection
at Supply
Overvoltage Protection at Output
Output Voltage over
Temperature Range
Output Leakage Current over
Temperature Range
Internal Oscillator Chopper
Frequency over Temperature
Range
Enable Time of Output after
Setting of V
DD
Output Rise Time
Output Fall Time
Pin No.
1
Min.
1.6
−
−
−
−
−
−
1
−
−
−
Typ.
3
Max.
5.2
Unit
mA
I
DD
= 25 mA, T
J
= 25
°C,
t = 20 ms
I
OH
= 25 mA, T
J
= 25
°C,
t = 20 ms
I
OL
= 20 mA
Output switched off,
T
J
≤150 °C,
V
OH
= 3.8 to 24 V
HAL10y, HAL11y
HAL104
Conditions
1
28.5
32
V
3
3
28
130
−
62
140
35
32
400
V
mV
3
−
10
−
−
−
400
400
µA
kHz
kHz
µs
t
en(O)
t
r
t
f
3
3
75
50
ns
ns
V
DD
= 12 V,
R
L
= 820 Ohm,
C
L
= 20 pF
SOT89B Package
Thermal Resistance
R
thja
R
thjc
Junction to Ambient
Junction to Case
−
−
−
−
−
−
212
73
K/W
K/W
Measured with a 1s0p board
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 2–3)
TO92UA Package
Thermal Resistance
R
thja
R
thjc
1)
Measured with a 1s0p board
−
−
−
−
−
−
225
63
K/W
K/W
Junction to Ambient
Junction to Case
V
DD
= 12 V, B > B
ON
+ 2 mT or B < B
OFF
−
2 mT
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 2–3:
Recommended footprint SOT89B-3, Dimensions in mm
All dimensions are for reference only. The pad size may vary depending on the requirements of the soldering process.
Micronas
April 8, 2009; DSH000150_001EN
9