HAL300
Ambient Temperature
µA
2
10
1
10
0
10
T
A
= 125
°C
–1
10
–2
10
T
A
= 75
°C
–3
10
–4
10
–5
10
20
V
DD
= 5 V
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T
J
) is higher
than the temperature outside the package (ambient tem-
perature T
A
).
T
J
= T
A
+
∆T
At static conditions, the following equations are valid:
– for SOT-89A:
– for TO-92UA:
∆T
= I
DD
* V
DD
* R
thJSB
∆T
= I
DD
* V
DD
* R
thJA
I
OH
T
A
= 25
°C
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for I
DD
and
R
th
, and the max. value for V
DD
from the application.
22
24
26
28
V
OH
30 V
Test Circuits for Electromagnetic Compatibility
Test pulses V
EMC
corresponding to DIN 40839.
R
V
220
Ω
1
V
DD
OUT
3
R
L
1.2 kΩ
Fig. 20:
Typical output leakage current
versus output voltage
Application Notes
Mechanical stress can change the sensitivity of the Hall
plates and an offset of the magnetic switching points
may result. External mechanical stress to the package
can influence the magnetic parameters if the sensor is
used under back-biased applications. This piezo sensi-
tivity of the sensor IC cannot be completely compen-
sated for by the switching offset compensation tech-
nique.
For back-biased applications, the HAL 320 is recom-
mended. In such cases, please contact our Application
Department. They will provide assistance in avoiding
applications which may induce stress to the ICs. This
stress may cause drifts of the magnetic parameters indi-
cated in this data sheet.
For electromagnetic immunity, it is recommended to ap-
ply a 4.7 nF capacitor between V
DD
(pin 1) and Ground
(pin 2). For automotive applications, a 220
W
series re-
sistor to pin 1 is recommended. Because of the I
DD
peak
at 4.1 V, the series resistor should not be greater than
270
Ω.
The series resistor and the capacitor should be
placed as close as possible to the IC.
V
EMC
V
P
4.7 nF
2
GND
20 pF
Fig. 21:
Test circuit 2: test procedure for class A
R
V
220
Ω
1
V
EMC
4.7 nF
2
GND
V
DD
OUT
3
R
L
680
Ω
Fig. 22:
Test circuit 1: test procedure for class C
Micronas
11
MICRONAS [ MICRONAS ]
