HAL55x, HAL56x
3.6. Electrical Characteristics at T = –40 °C to +170 °C , V = 4 V to 24 V, as not otherwise specified in Conditions
J
DD
Typical Characteristics for T = 25 °C and V = 12 V
J
DD
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
I
Low Current Consumption
over Temperature Range
1
2
3.3
5
mA
DDlow
I
High Current Consumption
over Temperature Range
1
1
–
–
1
12
–
14.3
28.5
145
145
20
17
32
–
mA
V
DDhigh
V
Overvoltage Protection
at Supply
I = 25 mA, T = 25 °C,
DD J
DDZ
t = 20 ms
f
f
t
Internal Oscillator
Chopper Frequency
90
75
kHz
kHz
µs
T = 25 °C
J
osc
Internal Oscillator Chopper Fre-
quencyover TemperatureRange
–
osc
1)
Enable Time of Output after
30
en(O)
Setting of V
DD
t
t
Output Rise Time
Output Fall Time
1
1
–
0.4
0.4
150
1.6
1.6
200
µs
V
V
= 12 V, R = 30 Ω
s
r
DD
µs
= 12 V, R = 30 Ω
s
f
DD
R
case
SOT-89B
Thermal Resistance Junction
to Substrate Backside
–
–
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–3
thJSB
R
case
Thermal Resistance Junction
to Soldering Point
–
150
200
K/W
thJA
TO-92UA
1)
B > B + 2 mT or B < B
– 2 mT for HAL55x, B > B
+ 2 mT or B < B – 2 mT for HAL56x
OFF ON
ON
OFF
5.0
2.0
2.0
1.0
Fig. 3–3: Recommended pad size SOT-89B
Dimensions in mm
8
Micronas
MICRONAS [ MICRONAS ]
