DATA SHEET
HAL57x, HAL58x
3.6. Characteristics
at T
J
=
−40
°C to +140 °C, V
DD
= 3.75 V to 24 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for T
J
= 25 °C and V
DD
= 12 V.
Symbol
I
DDlow
Parameter
Low Current Consumption
over Temperature Range
High Current Consumption
over Temperature Range
Overvoltage Protection
at Supply
Internal Oscillator Chopper
Frequency over Temperature
Range
Enable Time of Output after
Setting of V
DD
Output Rise Time
Output Fall Time
Pin No.
1
Min.
5
4.5
I
DDhigh
V
DDZ
f
osc
1
1
−
12
−
−
Typ.
6
6
14.3
28.5
145
Max.
6.9
6.9
17
32
−
Unit
mA
mA
mA
V
kHz
I
DD
= 25 mA, T
J
= 25
°C,
t = 20 ms
for HAL579 only
Test Conditions
t
en(O)
t
r
t
f
1
1
1
−
−
−
30
0.4
0.4
−
1.6
1.6
µs
µs
µs
1)
V
DD
= 12 V, R
s
= 30
Ω
V
DD
= 12 V, R
s
= 30
Ω
SOT89B Package
Thermal Resistance
R
thja
R
thjc
R
thjs
Junction to Ambient
Junction to Case
Junction to Solder Point
−
−
−
−
−
−
−
−
−
209
2)
K/W
K/W
K/W
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–6)
56
2)
82
3)
TO92UA Package
Thermal Resistance
R
thja
R
thjc
R
thjs
1)
2)
3)
Junction to Ambient
Junction to Case
Junction to Solder Point
−
−
−
−
−
−
−
−
−
246
2)
70
2)
3)
K/W
K/W
K/W
127
B > B
ON
+ 2 mT or B < B
OFF
−
2 mT for HAL57x, B > B
OFF
+ 2 mT or B < B
ON
−
2 mT for HAL58x
Measured with a 1s0p board
Measured with a 1s1p board
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–6:
Recommend pad size SOT89B-1
Dimensions in mm
Micronas
Dec. 22, 2008; DSH000145_003EN
15
MICRONAS [ MICRONAS ]
