DATA SHEET
HAL810
3.6. Characteristics
at T
J
=
−40
°C to +170 °C, V
DD
= 4.5 V to 5.5 V, GND = 0 V after programming and locking of the device,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for T
J
= 25 °C and V
DD
= 5 V.
Symbol
I
DD
V
DDZ
V
OZ
Parameter
Supply Current
over Temperature Range
Overvoltage Protection
at Supply
Overvoltage Protection
at Output
Output Duty Cycle
Resolution
INL
ΔT
K
Non-Linearity of Output Duty
Cycle over Temperature
Variation of Linear
Temperature Coefficient
Pin No. Min.
1
1
3
3
3
3
3
−
−
−
−
−0.5
−400
−1
Typ.
7
17.5
17
−
0
0
0
Max.
10
20
19.5
11
0.5
400
1
Unit
mA
V
V
bit
%
ppm/k
%
I
DD
= 25 mA, T
J
= 25 °C, t = 20 ms
I
O
= 10 mA, T
J
= 25 °C, t = 20 ms
1)
Conditions
2)
if TC and TCSQ suitable for the
application
ΔDC
MIN-DUTY
Accuracy of Minimum Duty
Cycle over Temperature
Range
ΔDC
MAX-
DUTY
Accuracy of Maximum Duty
Cycle over Temperature
Range
Output High Voltage
Output Low Voltage
PWM Output Frequency
over Temperature Range
Internal ADC Frequency
over Temperature Range
Power-Up Time (Time to
reach valid duty cycle)
Output Resistance over
Recommended Operating
Range
3
−1
0
1
%
V
OUTH
V
OUTL
f
PWM
f
ADC
t
POD
R
OUT
3
3
−
−
−
3
−
−
105
110
−
−
4.8
0.2
125
128
−
1
−
−
145
150
25
10
V
V
Hz
kHz
ms
Ω
V
DD
= 5 V,
−1
mA
≤
I
OUT
≤ 1
mA
V
DD
= 5 V,
−1
mA
≤
I
OUT
≤
1 mA
V
OUTLmax
≤
V
OUT
≤
V
OUTHmin
TO92UT Package
Thermal Resistance
R
thja
R
thjc
1)
2)
−
−
−
−
−
235
61
measured on an 1s0p board
Junction to Ambient
Junction to Case
if the Hall IC is programmed accordingly
if more than 50% of the selected magnetic field range are used
Micronas
Feb. 6, 2009; DSH000034_003EN
19