1N5614 thru 1N5622
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/427 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These
devices are also available in surface mount MELF package configurations by
adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US).
Microsemi also offers numerous other rectifier products to meet higher and lower
current ratings with various recovery time speed requirements including fast and
ultrafast device types in both through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
APPEARANCE
WWW .
Microsemi
.C
OM
“A” Package
FEATURES
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Popular JEDEC registered 1N5614 to 1N5622 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category
I”
Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/427
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5614US thru 1N5622US)
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APPLICATIONS / BENEFITS
Standard recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
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Junction & Storage Temperature: -65
o
C to +200
o
C
Thermal Resistance: 38
o
C/W junction to lead at 3/8
inch (10 mm) lead length from body
Thermal Impedance: 4.5
o
C/W @ 10 ms heating time
Average Rectified Forward Current (I
O
): 1.0 Amps @
T
A
= 55ºC and 0.75 Amps @ T
A
= 100ºC
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
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MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs (package dimensions on last page)
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish. Note: Previous JANS
inventory had solid Silver axial-leads and no finish.
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 340 mg
REVERSE
CURRENT
(MAX.)
I
R
@ V
RWM
μA
25 C
0.5
0.5
0.5
0.5
0.5
o
o
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ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE V
RWM
VOLTS
1N5614
1N5616
1N5618
1N5620
1N5622
200
400
600
800
1000
MINIMUM
BREAKDOWN
VOLTAGE
V
BR
@ 50μA
VOLTS
220
440
660
880
1100
AVERAGE
RECTIFIED
CURRENT
I
O
@ T
A
(NOTE 1)
AMPS
o
o
55 C
100 C
1.00
.750
1.00
.750
1.00
.750
1.00
.750
1.00
.750
FORWARD
VOLTAGE
(MAX.)
V
F
@ 3A
VOLTS
MAXIMUM
SURGE
CURRENT
I
FSM
(NOTE 2)
AMPS
30
30
30
30
30
REVERSE
RECOVERY
(NOTE 3)
t
rr
μs
2.0
2.0
2.0
2.0
2.0
1N5614 – 1N5622
0.8 MIN.
1.3 MAX.
100 C
25
25
25
25
25
NOTE 1:
From 1 Amp at T
A
= 55
o
C, derate linearly at 5.56 mA/
o
C to 0.75 Amp at T
A
= 100
o
C. From T
A
= 100
o
C,
derate linearly at 7.5 mA/
o
C to 0 Amps at T
A
= 200
o
C. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where T
J(max)
does not exceed 175
o
C.
NOTE 2:
T
A
= 100
o
C, f = 60 Hz, I
O
= 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3:
I
F
= 0.5A, I
RM
= 1A, I
R(REC)
= 0.250A
Copyright
©
2007
1-15-2007 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
MICROSEMI [ MICROSEMI CORPORATION ]
