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1N5812 参数 Datasheet PDF下载

1N5812图片预览
型号: 1N5812
PDF下载: 下载PDF文件 查看货源
内容描述: 超快速恢复二极管 [ULTRA FAST RECOVERY RECTIFIERS]
分类和应用: 二极管超快速恢复二极管
文件页数/大小: 1 页 / 61 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
   
TECHNICAL DATA
FAST RECOVERY POWER RECTIFIER
Qualified per MIL-PRF-19500/478
Devices
1N5812
1N5812R
1N5814
1N5814R
1N5815
1N5815R
1N5816
1N5816R
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Reverse Voltage
Working Peak Reverse Voltage
Average Forward Current
T
C
= +100
0
C
(1)
Forward Current Surge Peak T
C
= +100
0
C
t
p
= 8.3 ms
Reverse Recovery Time
Operating & Storage Junction Temperature
Symbol
V
R
V
RWM
I
O
I
FSM
t
rr
T
J
,
T
stg
1N5812 1N5814 1N5816
Unit
1N5812R 1N5814R 1N5816R
50
50
100
100
20
400
35
-65 to +175
150
150
Vdc
Vpk
Adc
Adc
ηs
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
1.5
R
θ
JC
0
0
0
0
1) Derate linearly 250 mA/ C from +100 C to +150 C, & 300 mA/ C above +150
0
C
0
Unit
C/W
DO-203AA
(DO-4)
ELECTRICAL CHARACTERISTICS
Characteristics
Thermal Impedance
I
H
rated I
O
; t
H
250ms; 10 mA
I
M
100 mA; t
MD
= 250
µs
(max)
Forward Voltage
t
p
8.3 ms, duty cycle
2.0% pulsed
I
F
=
10 A (pk)
I
F
=
20 A (pk)
Reverse Current
V
R
= Rated V
R
(See 1.3 of MIL-PRF-19500/478)
Breakdown Voltage
I
R
= 100
µAdc
1N5812, R
I
R
= 100
µAdc
1N5814, R
I
R
= 100
µAdc
1N5816, R
Junction Capacitance
V
R
= 10 Vdc, V
SIG
= 50 mVdc (p-p) max, f = 1.0 MHz
Forward Recovery Voltage
t
p
20
ηs,
t
r
= 8.0
ηs;
I
F
= 1,000 mA
Forward Recovery Time
I
F
= 1,000 mA
Symbol
Z
θ
JX
V
F1
V
F2
I
R
60
110
160
Min.
*See appendix A for
package outline
Max.
1.35
Unit
0
C/W
0.860
0.950
10
Vdc
Vpk
µAdc
V
(BR)
Vdc
C
J
V
FR
t
rr
300
2.2
15
pF
V(pk)
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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