TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368
Devices
2N3439
2N3439L
2N3440
2N3440L
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
,
T
stg
0
2N3439
350
450
2N3440
250
300
Units
Vdc
Vdc
Vdc
Adc
W
W/
0
C
0
C
@T
A
= 25
0
C
(1)
@T
C
= 25
0
C
(2)
Operating & Storage Temperature Range
1)
7.0
1.0
0.8
5.0
-55 to +200
TO- 5*
2N3439L, 2N3440L
2)
Derate linearly 4.57 mW/ C for T
A
> +25 C
Derate linearly 28.5 mW/
0
C for T
C
> +25
0
C
0
TO-39* (TO205-AD)
2N3439, 2N3440
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 50 mAdc
Collector-Emitter Cutoff Current
V
CE
= 300 Vdc
V
CE
= 200 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
2N3439
2N3440
2N3439
2N3440
V
(BR)
CEO
I
CEO
350
250
2.0
2.0
10
Vdc
µAdc
µAdc
µAdc
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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